ssp4n60b sss4n60b.pdf datasheet:

SSP4N60B/SSS4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well TO-220F package isolation = 4.0kV (Note 6)suited for high efficiency switch mode power supplies.DG TO-220 TO-220FG D SG DSSSP Series SSS SeriesSAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter SSP4N60B SSS4N60B UnitsV