ssrf4n60.pdf datasheet:

SSRF4N60 4A , 600 V , RDS(ON) 2.4 N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION ITO-220 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without B Ndegrading performance over time. This advanced technology has Dbeen especially tailored to minimize on-state resistance, provide Esuperior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology. M AFEATURES Robust high voltage termination H J C Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a dis