stbd135t stbd137t stbd139t.pdf datasheet:

BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. ECB TO-126 Plastic Package OAbsolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD135T BD137T BD139TCollector Emitter Voltage VCEO 45 60 80 VCollector Emitter Voltage ( RBE = 1 K) VCER 45 60 100 VCollector Base Voltage VCBO 45 60 100 VEmitter Base Voltage VEBO 5 VCollector Current - Continuous IC 1.5 A Collector Current - Peak 1) ICM 2 Base Current - Continuous IB 0.5 AOTotal Power Dissipation @ TA=25 C 1.25 W PD O ODerate above 25 C 10 mW/ COTotal Power Dissipation @ TC=25 C 12.5 W PD O ODerate above 25 C 100 mW/ COTotal Power Dissipation @ TC=70 C PD 8 WOOperating and Storage Junction Temperature Range Tj, Tstg -55 to +150 C ORJA Thermal Resistance, Junctio