std18n65m5.pdf datasheet:

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD18N65M5FEATURESHigher V ratingDSSExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV Gate-Source Voltage 25 VGSSDrain Current-Continuous@T =25C 15I AD9.4 T =175 T =125J CI Drain Current-Single Pulsed 60 ADMP Total Dissipation @T =25 110 WD CT Max. Operating Junction Temperature 150 chStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 1.14/WRth(ch-a) Channel-to-ambient thermal resistance 501isc websitewww.iscsemi.cn