stl18n65m2.pdf datasheet:

STL18N65M2N-channel 650 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - preliminary dataFeaturesVDS @ Order codesTJmax RDS(on) max IDSTL18N65M2 715 V 0.365 8 A Extremely low gate charge123 Excellent output capacitance (Coss) profile4 100% avalanche testedPowerFLAT 5x6 HV Zener-protectedApplications Switching applicationsFigure 1. Internal schematic diagramD(5, 6, 7, 8)8 7 6 5DescriptionThis device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical G(4)structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.1 2 3 4Top ViewS(1, 2, 3)AM15540v3Table 1. Device summaryOrder code