stm4435.pdf datasheet:

GreenProductS TM4435S amHop Microelectronics C orp.J AN.20 2006P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.20 @ VG S = -10V-30V -8AS urface Mount Package.33 @ VG S = -4.5VD D D D8 7 6 5S O-811 2 3 4S S S GABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)Limit UnitParameter S ymbolDrain-S ource VoltageVDS 30 VVGSGate-S ource Voltage 25 Va ID 8 ADrain Current-Continuous @ Tj=25 Cb-PulsedIDM 40 Aa1.7 ADrain-S ource Diode Forward Current ISaMaximum Power Dissipation PD W2.5Operating Junction and S torageTJ, TS TG -55 to 150 CTemperature R angeTHE R MAL CHAR ACTE R IS TICSThermal R esistance, Junction-to-Ambienta R JA 50C/W1S TM4435ELECTRICAL CHARACT