stp4435a.pdf datasheet:

STP4435A P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, and other battery powered circuits.FEATURE PIN CONFIGURATION SOP-8 -30V/-9.2A, RDS(ON) = 22m (Typ.) @VGS =-10V -30V/-7.0A, RDS(ON) = 34m @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 YYear Code A: Produce Code B: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 U