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stu09n25 std09n25.pdf datasheet:

stu09n25_std09n25stu09n25_std09n25

STU09N25GreenProductSTD09N25aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.250V 7.5A 0.4 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)Symbol Parameter UnitsLimitVDSDrain-Source Voltage 250 VVGS Gate-Source Voltage 20 VATC=25C 7.5a dIDDrain Current-Continuous TC=100C 4.74 AbIDM-Pulsed 25 ATC=25C 52 WPD Maximum Power DissipationTC=100C W21Operating Junction and Storage TJ, TSTG Temperature Range -55 to 150 CTHERMAL CHARACTERISTICSR JC Thermal Resistance, Junction-to-Case 2.4 C/WR JA Thermal Resistance, Junction-to-Ambient

 

Keywords - ALL TRANSISTORS DATASHEET

 stu09n25 std09n25.pdf Design, MOSFET, Power

 stu09n25 std09n25.pdf RoHS Compliant, Service, Triacs, Semiconductor

 stu09n25 std09n25.pdf Database, Innovation, IC, Electricity

 

 
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