sw4n60dc swi4n60dc swd4n60dc.pdf datasheet:

SW4N60DCN-channel Enhancement mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252 BVDSS : 600VID : 4A High ruggedness RDS(ON) (Typ 2.0)@VGS=10VRDS(ON) : 2.0 Gate Charge (Typ 17nC) Improved dv/dt Capability 121 2 100% Avalanche Tested2 33 Application: LED,Charge11. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET is produced with advanced technology of SAMWIN.This technology enable power MOSFET to have better characteristics, such as fastswitching time, low on resistance, low gate charge and especially excellent avalanchecharacteristics. Order CodesItem Sales Type Marking Package Packaging1 SW I 4N60DC SW4N60DC TO251 TUBE2 SW D 4N60DC SW4N60DC TO252 TUBEAbsolute maximum ratingsValueSymbol Parameter UnitTO-251 TO-252VDSS Drain to Source Voltage 600 VContinuous Drain Current (@TC=25oC) 4* A