tip54.pdf datasheet:

isc Silicon NPN Power Transistors TIP54DESCRIPTIONDC Current Gain -h = 30~150@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,and switchingpower supply drivers applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 3.0 ACI Collector Current-Peak 5.0 ACMI Base Current 0.6 ABCollector Power DissipationP 100 WDT =25CT Junction Temperature 150 jT Storage Temperature Range -65~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.25 /Wth j-c

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