tsm10n60ci tsm10n60cz.pdf datasheet:

TSM10N60 600V N-Channel MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)()(max) ID (A) 2. Drain 3. Source 600 0.75 @ VGS =10V 10 Features Block Diagram Advanced high dense cell design. High Power and Current handing capability. Application Power Supply. Lighting. Ordering Information Part No. Package Packing TSM10N60CZ C0 TO-220 50pcs / Tube TSM10N60CI C0 ITO-220 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (TC = 25oC unless otherwise noted) Limit Parameter Symbol Unit TO-220 ITO-220 Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC = 25 oC 10 Continuous Drain Current IDa A TC = 100 oC 6 Pulsed Drain Current b IDMa 40 A Total Power Dissipation @ TC=25C PDTOT 166 50 W Single Pulsed Avalanche Energy c EAS 41 mJ oOperating Junction and Storage Te