tsm4435cs.pdf datasheet:
TSM4435 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 21 @ VGS = -10V -9.1 4. Gate -30 35 @ VGS = -4.5V -6.9 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion Battery Switch P-Channel MOSFET Ordering Information Part No. Package Packing TSM4435CS RL SOP-8 2.5Kpcs / 13 Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID -9.1 A Pulsed Drain Current IDM -50 A Continuous Source Current (Diode Conduction)a,b IS -2.1 A Ta = 25oC 2.5 Maximum Power Dissipation PD W Ta = 75oC 1.6 oOperating Junction
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