wff15n60.pdf datasheet:

WFF15N60WFF15N60WFF15N60WFF15N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 15A,600V, R (Max0.52)@V =10VDS(on) GS Ultra-low Gate charge(Typical 36nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Winsemi's advancedplanarstripe,DMOS technology.This latest technology has beenespeciallydesigned to minimize on-state resistance, have a high ruggedavalanche characteristics .This devices is specially wellsuited forhigh efficiency switch model power supplies, power factor correctionand half bridge and full bridge resonant topology line a electroniclamp ballast.Absolute Maximum RatingsSymbol Parameter Value UnitsV Drain Source Voltage 600 VDSSContinuous Drain Current