SKM200GAL123D Todos los transistores

 

SKM200GAL123D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SKM200GAL123D
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 1380
   Tensión máxima colector-emisor |Vce|, V: 1200
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 200
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.5
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 100
   Capacitancia de salida (Cc), typ, pF: 1500
   Carga total de la puerta (Qg), typ, nC: 1500
   Paquete / Cubierta: MODULE

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SKM200GAL123D Datasheet (PDF)

 ..1. Size:635K  semikron
skm200gal123d.pdf

SKM200GAL123D SKM200GAL123D

 0.1. Size:265K  macmic
skm200gal123dkld110.pdf

SKM200GAL123D SKM200GAL123D

SKM200GAL123DKLD110 1200V 200A RECTIFIER AND CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding in

 3.1. Size:415K  semikron
skm200gal12t4.pdf

SKM200GAL123D SKM200GAL123D

SKM200GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAL12T4Tc =80

 3.2. Size:664K  semikron
skm200gal126d.pdf

SKM200GAL123D SKM200GAL123D

 3.3. Size:414K  semikron
skm200gal12e4.pdf

SKM200GAL123D SKM200GAL123D

SKM200GAL12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAL12E4Tc =80C 172

 3.4. Size:684K  semikron
skm200gal125d.pdf

SKM200GAL123D SKM200GAL123D

Otros transistores... SKM195GAL062D , SKM195GAL063DN , SKM195GAL124DN , SKM195GAR063DN , SKM195GB062D , SKM195GB063DN , SKM195GB124DN , SKM200GA123D , RJP63K2DPP-M0 , SKM200GAL173D , SKM200GAR123D , SKM200GAR173D , SKM200GAX173D , SKM200GAY173D , SKM200GB063D , SKM200GB123D , SKM200GB124D .

 

 
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SKM200GAL123D
  SKM200GAL123D
  SKM200GAL123D
 

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Recientemente añadidas las descripciónes de los transistores

IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ

 

 

 
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