SKM300GAX123D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SKM300GAX123D
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1660 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 90 nS
Coesⓘ - Capacitancia de salida, typ: 2500 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
SKM300GAX123D Datasheet (PDF)
skm300gax123d skm300gay123d.pdf

SEMITRANS MAbsolute Maximum RatingsValuesIGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 300 GAX 123 D 6)IC Tcase = 25/80 C 300 / 220 ASKM 300 GAY 123 D 6)ICM Tcase = 25/80 C; tp = 1 ms 600 / 440 AVGES 20 VPtot per IGBT, Tcase = 25 C 1660 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 Vhumidity DIN 40 040 Class F
skm300ga12v.pdf

SKM300GA12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 420 ATj = 175 CTc =80C 319 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 4tpsc VGE 15 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GA12VTc =80C 264 AIFnom
skm300gar12e4.pdf

SKM300GAR12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 422 ATj = 175 CTc =80C 324 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GAR12E4Tc =
skm300ga12e4.pdf

SKM300GA12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 422 ATj = 175 CTc =80C 324 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 4tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GA12E4Tc =80
Otros transistores... FGH50N6S2D , SKM22GD123D , SKM300GA123D , SKM300GA173D , SKM300GAL063D , SKM300GAL123D , SKM300GAR063D , SKM300GAR123D , GT30G124 , SKM300GAY123D , SKM300GB063D , SKM300GB123D , SKM300GB124D , SKM300GB174D , SKM400GA062D , SKM400GA123D , SKM400GA124D .
History: MSG40T120FH | IXYH40N65C3H1 | IKW40N65F5 | IXYX100N65B3D1 | JNG40T65HYU1 | CM300DU-12F | MBN400GR12A
History: MSG40T120FH | IXYH40N65C3H1 | IKW40N65F5 | IXYX100N65B3D1 | JNG40T65HYU1 | CM300DU-12F | MBN400GR12A



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