SKM300GAX123D Todos los transistores

 

SKM300GAX123D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SKM300GAX123D

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1660 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃

trⓘ - Tiempo de subida, typ: 90 nS

Coesⓘ - Capacitancia de salida, typ: 2500 pF

Encapsulados: MODULE

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SKM300GAX123D datasheet

 ..1. Size:4151K  semikron
skm300gax123d skm300gay123d.pdf pdf_icon

SKM300GAX123D

SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) Units VCES 1200 V VCGR RGE = 20 k 1200 V SKM 300 GAX 123 D 6) IC Tcase = 25/80 C 300 / 220 A SKM 300 GAY 123 D 6) ICM Tcase = 25/80 C; tp = 1 ms 600 / 440 A VGES 20 V Ptot per IGBT, Tcase = 25 C 1660 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 2500 V humidity DIN 40 040 Class F

 6.1. Size:418K  semikron
skm300ga12v.pdf pdf_icon

SKM300GAX123D

SKM300GA12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 420 A Tj = 175 C Tc =80 C 319 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 4 tpsc VGE 15 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GA12V Tc =80 C 264 A IFnom

 6.2. Size:678K  semikron
skm300gar12e4.pdf pdf_icon

SKM300GAX123D

SKM300GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GAR12E4 Tc =

 6.3. Size:625K  semikron
skm300ga12e4.pdf pdf_icon

SKM300GAX123D

SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 422 A Tj = 175 C Tc =80 C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 353 A Tj = 175 C SKM300GA12E4 Tc =80

Otros transistores... FGH50N6S2D , SKM22GD123D , SKM300GA123D , SKM300GA173D , SKM300GAL063D , SKM300GAL123D , SKM300GAR063D , SKM300GAR123D , IHW20N120R3 , SKM300GAY123D , SKM300GB063D , SKM300GB123D , SKM300GB124D , SKM300GB174D , SKM400GA062D , SKM400GA123D , SKM400GA124D .

History: IGC03R60D | IGC04R60D | IXSX50N60BU1 | IXSN52N60AU1

 

 

 


History: IGC03R60D | IGC04R60D | IXSX50N60BU1 | IXSN52N60AU1

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