SKM400GA174D Todos los transistores

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 skm400ga174d.pdf

SEMITRANS M Absolute Maximum Ratings Values Low Loss IGBT Modules Symbol Conditions 1) Units VCES 1700 V VCGR RGE = 20 k 1700 V SKM 400 GA 174 D IC; ICN Tcase = 25/75 C 540 / 400 A ICM Tcase = 25/75 C; tp = 1 ms 1080 / 800 A VGES 20 V Preliminary Data Ptot per IGBT, Tcase = 25 C 2780 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 4) 3400 V humidity DIN 40 04

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 skm400ga173d.pdf

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 skm400ga123d.pdf

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 skm400ga12e4.pdf

SKM400GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 616 A Tj = 175 C Tc =80 C 474 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 440 A Tj = 175 C SKM400GA12E4 Tc =8

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 skm400ga12v.pdf

SKM400GA12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 612 A Tj = 175 C Tc =80 C 467 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 4 tpsc VGE 15 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 440 A Tj = 175 C SKM400GA12V Tc =80 C 329 A IFnom

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 skm400ga124d.pdf

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 skm400ga12t4.pdf

SKM400GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 616 A Tj = 175 C Tc =80 C 474 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 440 A Tj = 175 C SKM400GA12T4