SKM50GH063DL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SKM50GH063DL
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 40 nS
Coesⓘ - Capacitancia de salida, typ: 300 pF
Paquete / Cubierta: MODULE
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SKM50GH063DL Datasheet (PDF)
skm50gd063dl skm50gdl063dl skm50gh063dl.pdf
SEMITRANS Absolute Maximum RatingsValuesSuperfast NPT-IGBT Symbol Conditions 1)UnitsModulesVCES 600 VVCGR RGE = 20 k 600 VIC Tcase = 25/75 C 70 / 50 ASKM 50 GD 063 DLICM Tcase = 25/75 C; tp = 1 ms 140 / 100 ASKM 50 GDL 063 D**)VGES 20 VSKM 50 GH 063 DL ***)Ptot per IGBT, Tcase = 25 C 250 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 V
skm50gb12t4.pdf
SKM50GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 81 ATj = 175 CTc =80C 62 AICnom 50 AICRM ICRM = 3xICnom 150 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 65 ATj = 175 CSKM50GB12T4Tc =80C 49 A
skm50gal12t4.pdf
SKM50GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 81 ATj = 175 CTc =80C 62 AICnom 50 AICRM ICRM = 3xICnom 150 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 65 ATj = 175 CSKM50GAL12T4Tc
skm50gb063d.pdf
SKM50GB063DAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 600 VIC Tc =25C 70 ATj = 150 CTc =75C 51 AICnom 50 AICRM ICRM = 2xICnom 100 AVGES -20 ... 20 VVCC = 300 VSEMITRANS 2tpsc VGE 20 V Tj = 125 C 10 sVCES 600 VTj -55 ... 150 CSuperfast NPT-IGBT Inverse diodeModulesIF Tc =25C 75 ATc =80C 45 ASKM50GB0
skm50gb12v.pdf
SKM50GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 79 ATj = 175 CTc =80C 60 AICnom 50 AICRM ICRM = 3xICnom 150 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 15 V Tj = 125 C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 65 ATj = 175 CSKM50GB12VTc =80C 49 AIFnom 50 ATarget Da
Otros transistores... SKM500GA123S , SKM500GA124D , SKM500GA174D , SKM50GAL123D , SKM50GB063D , SKM50GB123D , SKM50GD063DL , SKM50GDL063DL , GT45F122 , SKM75GAL063D , SKM75GAL123D , BRG60N65D , SKM75GB063D , SKM75GB123D , SKM75GB124D , SKM75GB173D , SKM75GD123D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2