APT50GF120LR - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT50GF120LR
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 781 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 135 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 43 nS
Coesⓘ - Capacitancia de salida, typ: 385 pF
Qgⓘ - Carga total de la puerta, typ: 340 nC
Paquete / Cubierta: TO264
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APT50GF120LR Datasheet (PDF)
apt50gf120lrg.pdf

TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)FAST IGBTT-Max TO-264The Fast IGBT is a new generation of high voltage power IGBTs. Using (L)Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt
apt50gf120hr.pdf

APT50GF120HR1200V 62AFast IGBTTO-258The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage CurrentGG Avalanche Rated
apt50gf120b2r.pdf

APT50GF120B2RAPT50GF120LR1200V 80AAPT50GF120B2RFast IGBTT-MaxTO-264(B2R)(LR)The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.GC G Low Forward Voltage Drop High Freq. Switching to 20KHzE CAPT50GF120LRC E
apt50gf120jrdq3.pdf

TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 1200V APT50GF120JRDQ3FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and fast switching speed."UL Recognized"ISOTOP file # E145592 Low Forwa
Otros transistores... IGC114T170S8RM , IGC11T120T6L , APT33GF120LRD , IGC189T120T8RL , IGC189T120T6RL , IGC168T170S8RM , APT50GF120HR , IGC168T170S8RH , MBQ60T65PES , APT50GF60AR , IGC142T120T8RL , IGC142T120T8RM , IGC15T65QE , APT50GF60LRD , IGC142T120T6RH , IGC142T120T6RL , IGC142T120T6RM .
History: MG75J2YS50 | MMG50H120X6TC | MIXA10WB1200TED | SPT40N120F1A1 | MG1275W-XBN2MM | VS-GT400TH60N | AFGY120T65SPD
History: MG75J2YS50 | MMG50H120X6TC | MIXA10WB1200TED | SPT40N120F1A1 | MG1275W-XBN2MM | VS-GT400TH60N | AFGY120T65SPD



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