FGA15N120FTD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGA15N120FTD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 220 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.58 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 70 pF
Paquete / Cubierta: TO3PN
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FGA15N120FTD Datasheet (PDF)
fga15n120ftd.pdf
January 2008FGA15N120FTDtm1200V, 15A Field Stop Trench IGBTFeatures Field stop trench technologyGeneral Description High speed switchingUsing advanced field stop trench technology, Fairchilds 1200V Low saturation voltage: VCE(sat) =1.58V @ IC = 15Atrench IGBTs offer superior conduction and switching perfor- High input impedancemances, and easy parallel o
fga15n120antdtu f109.pdf
May 2006FGA15N120ANTD / FGA15N120ANTD_F109tm1200V NPT Trench IGBTFeatures Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage: VCE(sat), typ = 1.9V and switching performances, high avalanche ruggedness and @ IC = 1
fga15n120antdtu.pdf
FGA15N120ANTDTU1200 V, 15 A NPT Trench IGBTDescriptionUsing ON Semiconductor's proprietary trench design and Featuresadvanced NPT technology, the 1200V NPT IGBT offers NPT Trench Technology, Positive temperature coefficient superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. Low Saturation Voltage: VCE(sat), typ = 1.9 V
Otros transistores... TA49115 , TA49117 , TA49119 , TA49121 , TA49123 , TA49182 , TA9895 , FGA15N120ANTDTU-F109 , XNF15N60T , FGA180N33ATD , FGA20N120FTD , FGA20S120M , FGA25N120ANTD , FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD , FGA30N60LSD .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2