FGA50N100BNT Todos los transistores

Introduzca al menos 3 números o letras

FGA50N100BNT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGA50N100BNT

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1000V

Voltaje de saturación colector-emisor (Vce sat): 2.5V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 60.0A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO3PN

Búsqueda de reemplazo de FGA50N100BNT - IGBT

 

FGA50N100BNT Datasheet (PDF)

1.1. fga50n100bntd2.pdf Size:811K _fairchild_semi

FGA50N100BNT
FGA50N100BNT

February 2009 tm FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description High Speed Switching Trench insulated gate bipolar transistors (IGBTs) with NPT Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A technology show outstanding performance in conduction and High Input Impedance switching characteristics as well as enhanced avalanche Built-in Fast Recover

1.2. fga50n100bntd.pdf Size:676K _fairchild_semi

FGA50N100BNT
FGA50N100BNT

November 2008 tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switching technology show outstanding performance in conduction Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A and switching characteristics as well as enhanced High Input Impedance avalanche ruggedness. These devic

1.3. fga50n100bnt.pdf Size:702K _fairchild_semi

FGA50N100BNT
FGA50N100BNT

March 2009 tm FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description High Speed Switching Trench insulated gate bipolar transistors (IGBTs) with NPT Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A technology show outstanding performance in conduction and High Input Impedance switching characteristics as well as enhanced avalanche RoHS Compliant ruggedness.

Otros transistores... FGA180N33ATD , FGA20N120FTD , FGA20S120M , FGA25N120ANTD , FGA25N120ANTDTU_F109 , FGA25N120FTD , FGA30N120FTD , FGA30N60LSD , FGH40N60UFD , FGA50N100BNTD , FGA50N100BNTD2 , FGA60N60UFD , FGA90N33ATD , FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD .

 


FGA50N100BNT
  FGA50N100BNT
  FGA50N100BNT
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


Introduzca al menos 1 números o letras