FGA50N100BNTD Todos los transistores

 ..1. Size:676K  fairchild semi
 fga50n100bntd.pdf

November 2008 tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switching technology show outstanding performance in conduction Low Saturation Voltage VCE(sat) = 2.5 V @ IC = 60A and switching characteristics as well as enhanced High Input Impedance avalanche ruggedness. Th

 ..2. Size:346K  onsemi
 fga50n100bntd.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:811K  fairchild semi
 fga50n100bntd2.pdf

February 2009 tm FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description High Speed Switching Trench insulated gate bipolar transistors (IGBTs) with NPT Low Saturation Voltage VCE(sat) = 2.5 V @ IC = 60A technology show outstanding performance in conduction and High Input Impedance switching characteristics as well as enhanced avalanche Built-in F

 0.2. Size:453K  onsemi
 fga50n100bntd2.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 2.1. Size:702K  fairchild semi
 fga50n100bnt.pdf

March 2009 tm FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description High Speed Switching Trench insulated gate bipolar transistors (IGBTs) with NPT Low Saturation Voltage VCE(sat) = 2.5 V @ IC = 60A technology show outstanding performance in conduction and High Input Impedance switching characteristics as well as enhanced avalanche RoHS Compliant