BUK856-400IZ IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUK856-400IZ datasheet

4.1. Size:65K philips
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Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400 IZ Protected Logic-Level IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level SYMBOL PARAMETER MIN. TYP. MAX. UNIT insulated gate bipolar power transistor in a plastic envelope, V(CL)CER Collector-emitter clamp voltage 370 410 500 V intended for automotive ignition VCEsa

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Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. VCE Collector-emitter voltage 800 V The device is intended for use in IC Collector current (DC) 24 A motor control, DC/DC and AC/DC Pt

9.1. Size:48K 1
buk854-800a.pdf pdf_icon

Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK854-800A GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. VCE Collector-emitter voltage 800 V The device is intended for use in IC Collector current (DC) 12 A motor control, DC/DC and AC/DC Pt

Otros transistores... IGC15T65QE , APT50GF60LRD , IGC142T120T6RH , IGC142T120T6RL , IGC142T120T6RM , IGC28T65T8M , IGC28T65QE , BUK854-800A , CRG60T60AN3H , BUK856-800A , BUK866-400IZ , CM75DY-28H , CT15SM-24 , CT20AS-8 , CT20ASJ-8 , CT20ASL-8 , CT20TM-8 .