BUK856-400IZ - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUK856-400IZ Datasheet (PDF)

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Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400 IZ Protected Logic-Level IGBTGENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level SYMBOL PARAMETER MIN. TYP. MAX. UNITinsulated gate bipolar powertransistor in a plastic envelope, V(CL)CER Collector-emitter clamp voltage 370 410 500 Vintended for automotive ignition VCEsa

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Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A GENERAL DESCRIPTION QUICK REFERENCE DATAFast-switching N-channel insulated SYMBOL PARAMETER MAX. UNITgate bipolar power transistor in aplastic envelope. VCE Collector-emitter voltage 800 VThe device is intended for use in IC Collector current (DC) 24 Amotor control, DC/DC and AC/DC Pt

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Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK854-800A GENERAL DESCRIPTION QUICK REFERENCE DATAFast-switching N-channel insulated SYMBOL PARAMETER MAX. UNITgate bipolar power transistor in aplastic envelope. VCE Collector-emitter voltage 800 VThe device is intended for use in IC Collector current (DC) 12 Amotor control, DC/DC and AC/DC Pt

Otros transistores... IGC15T65QE , APT50GF60LRD , IGC142T120T6RH , IGC142T120T6RL , IGC142T120T6RM , IGC28T65T8M , IGC28T65QE , BUK854-800A , FGA25N120ANTD , BUK856-800A , BUK866-400IZ , CM75DY-28H , CT15SM-24 , CT20AS-8 , CT20ASJ-8 , CT20ASL-8 , CT20TM-8 .