BUK856-400IZ - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK856-400IZ
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 125 W
|Vce|ⓘ - Tensión máxima colector-emisor: 500 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 12 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
Coesⓘ - Capacitancia de salida, typ: 95 pF
Paquete / Cubierta: TO220AB
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BUK856-400IZ Datasheet (PDF)
buk856-400 iz 2.pdf
Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400 IZ Protected Logic-Level IGBTGENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level SYMBOL PARAMETER MIN. TYP. MAX. UNITinsulated gate bipolar powertransistor in a plastic envelope, V(CL)CER Collector-emitter clamp voltage 370 410 500 Vintended for automotive ignition VCEsa
buk856-800a.pdf
Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A GENERAL DESCRIPTION QUICK REFERENCE DATAFast-switching N-channel insulated SYMBOL PARAMETER MAX. UNITgate bipolar power transistor in aplastic envelope. VCE Collector-emitter voltage 800 VThe device is intended for use in IC Collector current (DC) 24 Amotor control, DC/DC and AC/DC Pt
buk854-800a.pdf
Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK854-800A GENERAL DESCRIPTION QUICK REFERENCE DATAFast-switching N-channel insulated SYMBOL PARAMETER MAX. UNITgate bipolar power transistor in aplastic envelope. VCE Collector-emitter voltage 800 VThe device is intended for use in IC Collector current (DC) 12 Amotor control, DC/DC and AC/DC Pt
Otros transistores... IGC15T65QE , APT50GF60LRD , IGC142T120T6RH , IGC142T120T6RL , IGC142T120T6RM , IGC28T65T8M , IGC28T65QE , BUK854-800A , BT40T60ANF , BUK856-800A , BUK866-400IZ , CM75DY-28H , CT15SM-24 , CT20AS-8 , CT20ASJ-8 , CT20ASL-8 , CT20TM-8 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2