1MB08-120 Todos los transistores

 

1MB08-120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 1MB08-120
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 115 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 13 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 600 nS
   Coesⓘ - Capacitancia de salida, typ: 160 pF
   Paquete / Cubierta: TO3P

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1MB08-120 Datasheet (PDF)

 ..1. Size:257K  fuji
 1mb08-120 1mb08d-120.pdf pdf_icon

1MB08-120

1MB08-120,1MB08D-120, Molded IGBT 1200V / 8A Molded Package Features Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-up Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic

 ..2. Size:193K  fuji
 1mb08-120.pdf pdf_icon

1MB08-120

Fuji Discrete Package IGBT n Outline Drawing n n Features n Square RBSOA Low Saturation Voltage Less Total Power Dissipation Minimized Internal Stray Inductance n Applications n High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit n n Absolute Maxim

Otros transistores... TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , 1MB03D-120 , 1MB05-120 , 1MB05D-120 , RJP30H2A , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 , 1MB20D-060 , 1MB30-060 , 1MBC03-120 .

 

 
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