NGD8205N Todos los transistores

 

NGD8205N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGD8205N

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125W

Tensión colector-emisor (Vce): 350V

Voltaje de saturación colector-emisor (Vce sat): 1.3V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 20A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: DPAK-4

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NGD8205N Datasheet (PDF)

3.1. ngd8205a.pdf Size:115K _igbt

NGD8205N
NGD8205N

NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required

4.1. ngd8201b.pdf Size:81K _igbt

NGD8205N
NGD8205N

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

4.2. ngd8201a.pdf Size:123K _igbt

NGD8205N
NGD8205N

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

 4.3. ngd8201bnt4g.pdf Size:81K _igbt

NGD8205N
NGD8205N

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

Otros transistores... NGB8206A , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CLT4 , NGD18N40CLB , NGD8201A , NGD8201N , IRGB14C40L , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E , FII40-06D , FII50-12E , IXA12IF1200HB .

 

 
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