NGD8205N Todos los transistores

 

NGD8205N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGD8205N
   Tipo de transistor: IGBT + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 125 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 390 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 15 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.15 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 2.1 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 6000 nS
   Coesⓘ - Capacitancia de salida, typ: 80 pF
   Paquete / Cubierta: DPAK
 

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NGD8205N Datasheet (PDF)

 ..1. Size:115K  1
 ngd8205n.pdf pdf_icon

NGD8205N

NGD8205N, NGD8205ANIgnition IGBT20 Amp, 350 Volt, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required

 7.1. Size:115K  onsemi
 ngd8205a.pdf pdf_icon

NGD8205N

NGD8205N, NGD8205ANIgnition IGBT20 Amp, 350 Volt, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required

 8.1. Size:121K  1
 ngd8201n ngd8201an.pdf pdf_icon

NGD8205N

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

 8.2. Size:81K  onsemi
 ngd8201bnt4g.pdf pdf_icon

NGD8205N

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

MOSTRAR MÁS

Otros transistores... NGB8206AN , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CL , NGD18N40CLB , NGD8201A , NGD8201N , FGH60N60SFD , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E , FII40-06D , FII50-12E , IXA12IF1200HB .

 

 
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