IXA60IF1200NA IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXA60IF1200NA
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 290 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 88 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
trⓘ - Tiempo de subida, typ: 40 nS
Encapsulados: SOT227
Búsqueda de reemplazo de IXA60IF1200NA IGBT
- Selecciónⓘ de transistores por parámetros
IXA60IF1200NA datasheet
ixa60if1200na.pdf
IXA60IF1200NA VCES = 1200V XPT IGBT I= 88 A C25 VCE(sat) = 1.8V Copack Part number IXA60IF1200NA Backside isolated C(3) (G) 2 E(1+4) Features / Advantages Applications Package SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage V 3000 coefficient of the on-state voltage Solar inverter Industry standard
mixa60wb1200teh.pdf
MIXA60WB1200TEH Three Phase Brake Three Phase Converter - Brake - Inverter Rectifier Chopper Inverter Module VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM = 190 A IC25 = 60 A IC25 = 85 A XPT IGBT IFSM = 700 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V Part name (Marking on product) MIXA60WB1200TEH 21 22 D7 D1 D3 D5 D11 D13 D15 16 18 20 T1 T3 T5 NTC 8 7 15 17 19 1 2 3 6 5 4 D6 D2
mixa60w1200ted.pdf
MIXA60W1200TED Six-Pack VCES = 1200 V IC25 = 85 A XPT IGBT VCE(sat) = 1.8 V Preliminary data Part name (Marking on product) MIXA60W1200TED 15, 16 25, 26 1 5 9 17 2 6 10 23, 24 21, 22 NTC 19, 20 E 72873 18 Pin configuration see outlines. 3 7 11 4 8 12 13, 14 27, 28 Features Application Package Easy paralleling due to the positive AC motor drives "E2-Pa
mixa60hu1200va.pdf
MIXA60HU1200VA preliminary VCES = 1200V XPT IGBT Module I= 85 A C25 VCE(sat) = 1.8V H Bridge, Buck / Boost - Combination Part number MIXA60HU1200VA Backside isolated 6 10 2 1 8 3 5 4 7 9 Features / Advantages Applications Package V1-A-Pack Easy paralleling due to the positive temperature Switched-mode power supplies Isolation Voltage V 3600 coefficient o
Otros transistores... IXA20PG1200DHGLB, IXA27IF1200HJ, IXA30PG1200DHGLB, IXA33IF1200HB, IXA37IF1200HJ, IXA40PG1200DHGLB, IXA45IF1200HB, IXA55I1200HJ, IRG4PC50U, IXBF12N300, IXBF20N300, IXBF32N300, IXBF40N160, IXBF42N300, IXBF55N300, IXBF9N160G, IXBH10N170
History: IXBH12N300 | IXBH10N170
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2n4249 | a1013 transistor | 2sc2705 | bc239 | 2sc3264 | mp38a | bc546 transistor | bd243








