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IXBH28N170A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXBH28N170A

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1700V

Voltaje de saturación colector-emisor (Vce sat): 6V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 30A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 50

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXBH28N170A Datasheet (PDF)

1.1. ixbh28n170a ixbt28n170a.pdf Size:69K _ixys

IXBH28N170A
IXBH28N170A

ADVANCE TECHNICAL INFORMATION VCES = 1700 V High Voltage, High Gain IXBH 28N170A BIMOSFETTM Monolithic IC25 = 30 A IXBT 28N170A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25C30 A TO-

5.1. ixbh24n170 ixbt24n170.pdf Size:179K _ixys

IXBH28N170A
IXBH28N170A

Advance Technical Information High Voltage, High Gain VCES = 1700V IXBH24N170 BIMOSFETTM Monolithic IXBT24N170 IC110 = 24A Bipolar MOS Transistor ? VCE(sat) ? ? 2.5V ? ? TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M? 1700 V G VGES Continuous 20 V C C (TAB) E VGEM Transient 30 V IC25 TC = 25C 60 A I

5.2. ixbh20n140-160.pdf Size:62K _ixys

IXBH28N170A
IXBH28N170A

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 • International standard package VCES TJ = 25°C to 150°C 140

5.3. ixbh2n250.pdf Size:180K _igbt

IXBH28N170A
IXBH28N170A

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH2N250 BIMOSFETTM IXBT2N250 IC110 = 2A ≤ VCE(sat) ≤ ≤ 3.50V ≤ ≤ Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V G C (TAB) C VGES Continuous ± 20 V E VGEM Transient ± 30 V IC

5.4. ixbh20n160.pdf Size:60K _igbt

IXBH28N170A
IXBH28N170A

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 • International standard package VCES TJ = 25°C to 150°C 140

5.5. ixbh24n170.pdf Size:177K _igbt

IXBH28N170A
IXBH28N170A

Advance Technical Information High Voltage, High Gain VCES = 1700V IXBH24N170 BIMOSFETTM Monolithic IXBT24N170 IC110 = 24A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 2.5V ≤ ≤ TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V G VGES Continuous ± 20 V C C (TAB) E VGEM Transient ± 30 V IC

5.6. ixbh20n140.pdf Size:60K _igbt

IXBH28N170A
IXBH28N170A

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 • International standard package VCES TJ = 25°C to 150°C 140

5.7. ixbh20n300.pdf Size:174K _igbt

IXBH28N170A
IXBH28N170A

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBH20N300 BIMOSFETTM Monolithic IXBT20N300 IC110 = 20A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V C E VGES Continuous ± 20 V VGEM Transient ± 30 V

5.8. ixbh22n300hv.pdf Size:253K _igbt

IXBH28N170A
IXBH28N170A

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBT22N300HV BIMOSFETTM Monolithic IXBH22N300HV IC110 = 22A Bipolar MOS Transistor  VCE(sat)  2.7V    TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 3000 V E C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V TO-247HV (IXBH) VGEM

5.9. ixbh20n360hv.pdf Size:288K _igbt

IXBH28N170A
IXBH28N170A

Advance Technical Information High Voltage, High Gain VCES = 3600V IXBT20N360HV BIMOSFETTM Monolithic IXBH20N360HV IC110 = 20A Bipolar MOS Transistor  VCE(sat)  3.4V    TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 3600 V E C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1M 3600 V VGES Continuous ± 20 V TO-247HV (IXBH) VGEM

Otros transistores... IXBF55N300 , IXBF9N160G , IXBH10N170 , IXBH12N300 , IXBH16N170 , IXBH16N170A , IXBH20N300 , IXBH24N170 , SGH80N60UFD , IXBH2N250 , IXBH32N300 , IXBH40N160 , IXBH42N170 , IXBH42N170A , IXBH5N160G , IXBH6N170 , IXBH9N160G .

 


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