IXBH28N170A Todos los transistores

 

IXBH28N170A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXBH28N170A
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 36 nS
   Coesⓘ - Capacitancia de salida, typ: 132 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXBH28N170A Datasheet (PDF)

 ..1. Size:69K  ixys
 ixbh28n170a ixbt28n170a.pdf pdf_icon

IXBH28N170A

ADVANCE TECHNICAL INFORMATIONVCES = 1700 VHigh Voltage, High GainIXBH 28N170ABIMOSFETTM Monolithic IC25 = 30 AIXBT 28N170ABipolar MOS TransistorVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25

 9.1. Size:60K  ixys
 ixbh20n160.pdf pdf_icon

IXBH28N170A

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 20N160 IC25 = 20 AMOS Transistor VCE(sat) = 4.7 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features20N140 20N160 International standard packageVCES TJ = 25C to 150C 140

 9.2. Size:288K  ixys
 ixbh20n360hv.pdf pdf_icon

IXBH28N170A

Advance Technical InformationHigh Voltage, High GainVCES = 3600VIXBT20N360HVBIMOSFETTM MonolithicIXBH20N360HVIC110 = 20ABipolar MOS TransistorVCE(sat) 3.4VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3600 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3600 VVGES Continuous 20 VTO-247HV (IXBH)VGEM

 9.3. Size:179K  ixys
 ixbh24n170 ixbt24n170.pdf pdf_icon

IXBH28N170A

Advance Technical InformationHigh Voltage, High GainVCES = 1700VIXBH24N170BIMOSFETTM MonolithicIXBT24N170IC110 = 24ABipolar MOS TransistorVCE(sat) 2.5VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VCC (TAB)EVGEM Transient 30 VIC

MOSTRAR MÁS

Otros transistores... IXBF55N300 , IXBF9N160G , IXBH10N170 , IXBH12N300 , IXBH16N170 , IXBH16N170A , IXBH20N300 , IXBH24N170 , STGW60V60DF , IXBH2N250 , IXBH32N300 , IXBH40N160 , IXBH42N170 , IXBH42N170A , IXBH5N160G , IXBH6N170 , IXBH9N160G .

History: MMG300WB065B6EN | APT25GP120BG | IKB20N65EH5 | NCE75TD120WT4 | 7MBP75VDA120-50 | NCE20TD60BT | JNG20T60PI

 

 
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