IXBH28N170A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXBH28N170A
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 36 nS
Coesⓘ - Capacitancia de salida, typ: 132 pF
Qgⓘ - Carga total de la puerta, typ: 105 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IXBH28N170A - IGBT
IXBH28N170A Datasheet (PDF)
ixbh28n170a ixbt28n170a.pdf
ADVANCE TECHNICAL INFORMATIONVCES = 1700 VHigh Voltage, High GainIXBH 28N170ABIMOSFETTM Monolithic IC25 = 30 AIXBT 28N170ABipolar MOS TransistorVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25
ixbh20n160.pdf
High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 20N160 IC25 = 20 AMOS Transistor VCE(sat) = 4.7 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features20N140 20N160 International standard packageVCES TJ = 25C to 150C 140
ixbh20n360hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3600VIXBT20N360HVBIMOSFETTM MonolithicIXBH20N360HVIC110 = 20ABipolar MOS TransistorVCE(sat) 3.4VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3600 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3600 VVGES Continuous 20 VTO-247HV (IXBH)VGEM
ixbh24n170 ixbt24n170.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 1700VIXBH24N170BIMOSFETTM MonolithicIXBT24N170IC110 = 24ABipolar MOS TransistorVCE(sat) 2.5VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VCC (TAB)EVGEM Transient 30 VIC
ixbh20n140-160.pdf
High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 20N160 IC25 = 20 AMOS Transistor VCE(sat) = 4.7 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features20N140 20N160 International standard packageVCES TJ = 25C to 150C 140
ixbh24n170.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 1700VIXBH24N170BIMOSFETTM MonolithicIXBT24N170IC110 = 24ABipolar MOS TransistorVCE(sat) 2.5VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VCC (TAB)EVGEM Transient 30 VIC
ixbh2n250.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH2N250BIMOSFETTMIXBT2N250IC110 = 2AVCE(sat) 3.50VMonolithic Bipolar MOSTransistor TO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC (TAB)CVGES Continuous 20 VEVGEM Transient 30 VIC
ixbh20n300.pdf
Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBH20N300BIMOSFETTM MonolithicIXBT20N300IC110 = 20ABipolar MOS TransistorVCE(sat) 3.2VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 3000 VCEVGES Continuous 20 VVGEM Transient 30 V
ixbh20n140.pdf
High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 20N160 IC25 = 20 AMOS Transistor VCE(sat) = 4.7 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features20N140 20N160 International standard packageVCES TJ = 25C to 150C 140
ixbh22n300hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBT22N300HVBIMOSFETTM MonolithicIXBH22N300HVIC110 = 22ABipolar MOS TransistorVCE(sat) 2.7VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3000 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247HV (IXBH)VGEM
Otros transistores... IXBF55N300 , IXBF9N160G , IXBH10N170 , IXBH12N300 , IXBH16N170 , IXBH16N170A , IXBH20N300 , IXBH24N170 , GT30J127 , IXBH2N250 , IXBH32N300 , IXBH40N160 , IXBH42N170 , IXBH42N170A , IXBH5N160G , IXBH6N170 , IXBH9N160G .
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