IXBH42N170 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXBH42N170
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 360 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 139 nS
Coesⓘ - Capacitancia de salida, typ: 225 pF
Qgⓘ - Carga total de la puerta, typ: 188 nC
Paquete / Cubierta: TO247
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IXBH42N170 Datasheet (PDF)
ixbh42n170 ixbt42n170.pdf
High Voltage, High GainVCES = 1700VIXBH42N170BIMOSFETTM MonolithicIXBT42N170IC90 = 42ABipolar MOS TransistorVCE(sat) 2.8VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)CEIC25 TC = 25C 80 AILRMS Termin
ixbh42n170.pdf
High Voltage, High GainVCES = 1700VIXBH42N170BIMOSFETTM MonolithicIXBT42N170IC90 = 42ABipolar MOS TransistorVCE(sat) 2.8VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)CEIC25 TC = 25C 80 AILRMS Termin
ixbh42n170a.pdf
Advance Technical InformationBIMOSFETTM MonolithicIXBH 42N170A VCES = 1700 VBipolar MOS TransistorIXBT 42N170A IC25 = 42 AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C42 ATO-247 AD (IXBH)
ixbh42n170a ixbt42n170a.pdf
Advance Technical InformationBIMOSFETTM MonolithicIXBH 42N170A VCES = 1700 VBipolar MOS TransistorIXBT 42N170A IC25 = 42 AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C42 ATO-247 AD (IXBH)
ixbh42n250.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH42N250BIMOSFETTM MonolithicIC110 = 42ABipolar MOS TransistorVCE(sat) 3.0VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 2500 VEVGES Continuous 25 VG = Gate C = CollectorVGEM Transient 35
ixbh42n300hv.pdf
Preliminary Technical InformationHigh Voltage, BiMOSFETTMVCES = 3000VIXBT42N300HVMonolithic Bipolar MOSIXBH42N300HVIC110 = 42ATransistorVCE(sat) 3.0VTO-268HV (IXBT)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VTO-247HV (IXBH)VGES Continuous 25 VVGEM Trans
Otros transistores... IXBH16N170 , IXBH16N170A , IXBH20N300 , IXBH24N170 , IXBH28N170A , IXBH2N250 , IXBH32N300 , IXBH40N160 , STGW60V60DF , IXBH42N170A , IXBH5N160G , IXBH6N170 , IXBH9N160G , IXBK55N300 , IXBK64N250 , IXBK75N170 , IXBK75N170A .
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