IXBT20N300 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXBT20N300

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 3000 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃

trⓘ - Tiempo de subida, typ: 210 nS

Coesⓘ - Capacitancia de salida, typ: 92 pF

Encapsulados: TO268

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IXBT20N300 datasheet

 ..1. Size:174K  ixys
 ixbt20n300.pdf pdf_icon

IXBT20N300

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBH20N300 BIMOSFETTM Monolithic IXBT20N300 IC110 = 20A Bipolar MOS Transistor VCE(sat) 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V C E VGES Continuous 20 V VGEM Transient 30 V

 0.1. Size:198K  ixys
 ixbt20n300hv.pdf pdf_icon

IXBT20N300

Advance Technical Information High Voltage, High Gain IXBT20N300HV VCES = 3000V BIMOSFETTM Monolithic IC110 = 20A Bipolar MOS Transistor VCE(sat) 3.2V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V E VGES Continuous 20 V C (Tab) VGEM Transient 30 V IC25 TC = 25 C 50 A G

 6.1. Size:288K  ixys
 ixbt20n360hv.pdf pdf_icon

IXBT20N300

Advance Technical Information High Voltage, High Gain VCES = 3600V IXBT20N360HV BIMOSFETTM Monolithic IXBH20N360HV IC110 = 20A Bipolar MOS Transistor VCE(sat) 3.4V TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 3600 V E C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V VGES Continuous 20 V TO-247HV (IXBH) VGEM

 9.1. Size:180K  ixys
 ixbt2n250.pdf pdf_icon

IXBT20N300

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH2N250 BIMOSFETTM IXBT2N250 IC110 = 2A VCE(sat) 3.50V Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V G C (TAB) C VGES Continuous 20 V E VGEM Transient 30 V IC

MOSTRAR MÁS

Otros transistores... IXBN75N170, IXBN75N170A, IXBP5N160G, IXBR42N170, IXBT10N170, IXBT12N300, IXBT16N170, IXBT16N170A, KGF75N65KDF, IXBT24N170, IXBT28N170A, IXBT2N250, IXBT32N300, IXBT42N170, IXBT42N170A, IXBT6N170, IXBX25N250