IXBT42N170 Todos los transistores

 

IXBT42N170 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXBT42N170
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 360 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 139 nS
   Coesⓘ - Capacitancia de salida, typ: 225 pF
   Paquete / Cubierta: TO268
     - Selección de transistores por parámetros

 

IXBT42N170 Datasheet (PDF)

 ..1. Size:175K  ixys
 ixbh42n170 ixbt42n170.pdf pdf_icon

IXBT42N170

High Voltage, High GainVCES = 1700VIXBH42N170BIMOSFETTM MonolithicIXBT42N170IC90 = 42ABipolar MOS TransistorVCE(sat) 2.8VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)CEIC25 TC = 25C 80 AILRMS Termin

 ..2. Size:173K  ixys
 ixbt42n170.pdf pdf_icon

IXBT42N170

High Voltage, High GainVCES = 1700VIXBH42N170BIMOSFETTM MonolithicIXBT42N170IC90 = 42ABipolar MOS TransistorVCE(sat) 2.8VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)CEIC25 TC = 25C 80 AILRMS Termin

 0.1. Size:91K  ixys
 ixbt42n170a.pdf pdf_icon

IXBT42N170

Advance Technical InformationBIMOSFETTM MonolithicVCES = 1700 VIXBH 42N170ABipolar MOS TransistorIC25 = 42 AIXBT 42N170AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C42 ATO-247 AD (IXBH)

 0.2. Size:117K  ixys
 ixbh42n170a ixbt42n170a.pdf pdf_icon

IXBT42N170

Advance Technical InformationBIMOSFETTM MonolithicIXBH 42N170A VCES = 1700 VBipolar MOS TransistorIXBT 42N170A IC25 = 42 AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C42 ATO-247 AD (IXBH)

MOSTRAR MÁS

Otros transistores... IXBT12N300 , IXBT16N170 , IXBT16N170A , IXBT20N300 , IXBT24N170 , IXBT28N170A , IXBT2N250 , IXBT32N300 , IKW40N65WR5 , IXBT42N170A , IXBT6N170 , IXBX25N250 , IXBX55N300 , IXBX64N250 , IXBX75N170 , IXBX75N170A , IXDH35N60B .

History: AOK40B120H1 | SKM50GB12V | AP26G40GEO-HF | MMG200S060B6TC | CM75DY-28H | APT25GP90BDF1 | IRGIB15B60KD1P

 

 
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