IXBT42N170 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXBT42N170

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 360 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8(max) V @25℃

trⓘ - Tiempo de subida, typ: 139 nS

Coesⓘ - Capacitancia de salida, typ: 225 pF

Encapsulados: TO268

 Búsqueda de reemplazo de IXBT42N170 IGBT

- Selecciónⓘ de transistores por parámetros

 

IXBT42N170 datasheet

 ..1. Size:175K  ixys
 ixbh42n170 ixbt42n170.pdf pdf_icon

IXBT42N170

High Voltage, High Gain VCES = 1700V IXBH42N170 BIMOSFETTM Monolithic IXBT42N170 IC90 = 42A Bipolar MOS Transistor VCE(sat) 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 80 A ILRMS Termin

 ..2. Size:173K  ixys
 ixbt42n170.pdf pdf_icon

IXBT42N170

High Voltage, High Gain VCES = 1700V IXBH42N170 BIMOSFETTM Monolithic IXBT42N170 IC90 = 42A Bipolar MOS Transistor VCE(sat) 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 80 A ILRMS Termin

 0.1. Size:91K  ixys
 ixbt42n170a.pdf pdf_icon

IXBT42N170

Advance Technical Information BIMOSFETTM Monolithic VCES = 1700 V IXBH 42N170A Bipolar MOS Transistor IC25 = 42 A IXBT 42N170A VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C42 A TO-247 AD (IXBH)

 0.2. Size:117K  ixys
 ixbh42n170a ixbt42n170a.pdf pdf_icon

IXBT42N170

Advance Technical Information BIMOSFETTM Monolithic IXBH 42N170A VCES = 1700 V Bipolar MOS Transistor IXBT 42N170A IC25 = 42 A VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C42 A TO-247 AD (IXBH)

MOSTRAR MÁS

Otros transistores... IXBT12N300, IXBT16N170, IXBT16N170A, IXBT20N300, IXBT24N170, IXBT28N170A, IXBT2N250, IXBT32N300, IRGP4063, IXBT42N170A, IXBT6N170, IXBX25N250, IXBX55N300, IXBX64N250, IXBX75N170, IXBX75N170A, IXDH35N60B