IXGA12N120A3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGA12N120A3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 100 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 22 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4 V @25℃

|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V

trⓘ - Tiempo de subida, typ: 140 nS

Coesⓘ - Capacitancia de salida, typ: 30 pF

Qgⓘ - Carga total de la puerta, typ: 20.4 nC

Encapsulados: TO263

Búsqueda de reemplazo de IXGA12N120A3 IGBT

- Selecciónⓘ de transistores por parámetros

IXGA12N120A3 datasheet

..1. Size:201K ixys
ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf pdf_icon

GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V G

3.1. Size:578K ixys
ixga12n120a2 ixgp12n120a2.pdf pdf_icon

IXGA 12N120A2 VCES = 1200 V IGBT IXGP 12N120A2 IC25 = 24 A Optimized for VCE(sat) = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C24 A IC90 TC = 90 C12 A ICM TC = 25 C, 1

6.1. Size:51K ixys
ixga12n100 ixgp12n100 ixga12n100a ixgp12n100a.pdf pdf_icon

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V G VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25 C24 A TO-263 (IXGA) IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A

6.2. Size:116K ixys
ixga12n100u1 ixgp12n100u1 ixga12n100au1 ixgp12n100au1.pdf pdf_icon

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25 C24 A IC90 TC = 90 C12 A ICM TC =

Otros transistores... IXEL40N400, IXEN60N120, IXEN60N120D1, IXER20N120, IXER20N120D1, IXER35N120D1, IXER60N120, IXGA12N120A2, RJP63F3DPP-M0, IXGA12N60B, IXGA14N120B, IXGA15N120B2, IXGA16N60B2, IXGA16N60B2D1, IXGA16N60C2, IXGA16N60C2D1, IXGA20N100A3

IXGA12N120A3 Todos los transistores