IXGA12N60B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGA12N60B

Tipo de transistor: IGBT + Diode

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 100 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1(max) V @25℃

|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V

trⓘ - Tiempo de subida, typ: 20 nS

Coesⓘ - Capacitancia de salida, typ: 100 pF

Qgⓘ - Carga total de la puerta, typ: 32 nC

Encapsulados: TO263

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IXGA12N60B datasheet

 ..1. Size:71K  ixys
ixga12n60b ixgp12n60b.pdf pdf_icon

IXGA12N60B

IXGA 12N60B VCES = 600 V HiPerFASTTM IGBT IXGP 12N60B IC25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G E VGEM Transient 30 V IC25 TC = 25 C24 A IC90 TC = 90 C12 A TO-263 AA (IXGA) ICM TC =

 5.1. Size:70K  ixys
ixga12n60cd1 ixgp12n60cd1.pdf pdf_icon

IXGA12N60B

IXGA 12N60CD1 HiPerFASTTM IGBT VCES = 600 V IXGP 12N60CD1 LightspeedTM Series IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-263 (IXGA) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C24 A IC90 TC = 90 C12 A TO-220 AB ICM TC = 25 C,

 5.2. Size:97K  ixys
ixga12n60c ixgp12n60c.pdf pdf_icon

IXGA12N60B

VCES = 600 V IXGA 12N60C HiPerFASTTM IGBT IC25 = 24 A IXGP 12N60C VCE(sat)= 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-263 AA (IXGA) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G VGES Continuous 20 V C (tab) E VGEM Transient 30 V IC25 TC = 25 C24 A TO-220 AB IC90 TC = 90 C12 A (IXGP) ICM TC = 25 C, 1 ms 48

 7.1. Size:201K  ixys
ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf pdf_icon

IXGA12N60B

GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V G

Otros transistores... IXEN60N120, IXEN60N120D1, IXER20N120, IXER20N120D1, IXER35N120D1, IXER60N120, IXGA12N120A2, IXGA12N120A3, FGH60N60SFD, IXGA14N120B, IXGA15N120B2, IXGA16N60B2, IXGA16N60B2D1, IXGA16N60C2, IXGA16N60C2D1, IXGA20N100A3, IXGA20N120