IXGA20N100A3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGA20N100A3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 110 nS

Coesⓘ - Capacitancia de salida, typ: 56 pF

Encapsulados: TO263

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IXGA20N100A3 datasheet

 ..1. Size:220K  ixys
ixga20n100a3.pdf pdf_icon

IXGA20N100A3

Advance Technical Information VCES = 1000V GenX3TM 1000V IXGA20N100A3 IC90 = 20A IGBTs IXGP20N100A3 VCE(sat) 2.3V IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXGP) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C, RGE = 1M 1000 V VGES Continuous 20 V

 4.1. Size:111K  ixys
ixga20n100 ixgp20n100.pdf pdf_icon

IXGA20N100A3

VCES = 1000 V IXGA 20N100 IGBT IC25 = 40 A IXGP 20N100 VCE(sat) = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A TO-263 AA (IXGA) SSOA VGE = 15

 4.2. Size:110K  ixys
ixga20n100.pdf pdf_icon

IXGA20N100A3

VCES = 1000 V IXGA 20N100 IGBT IC25 = 40 A IXGP 20N100 VCE(sat) = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A TO-263 AA (IXGA) SSOA VGE = 15

 6.1. Size:69K  ixys
ixga20n120.pdf pdf_icon

IXGA20N100A3

VCES = 1200 V IXGA 20N120 IGBT IC25 = 40 A IXGP 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C E VGEM Transient 30 V IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-263 AA (IXGA) ICM TC = 25 C, 1 ms 80 A SSOA VGE = 15 V, T

Otros transistores... IXGA12N120A3, IXGA12N60B, IXGA14N120B, IXGA15N120B2, IXGA16N60B2, IXGA16N60B2D1, IXGA16N60C2, IXGA16N60C2D1, IRG7R313U, IXGA20N120, IXGA20N120A3, IXGA20N120B3, IXGA24N120C3, IXGA24N60C, IXGA30N120B3, IXGA30N60C3, IXGA30N60C3C1