IXGA42N30C3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGA42N30C3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 223 W
|Vce|ⓘ - Tensión máxima colector-emisor: 300 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 42(110°C) A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.54 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 23 nS
Coesⓘ - Capacitancia de salida, typ: 218 pF
Qgⓘ - Carga total de la puerta, typ: 76 nC
Paquete / Cubierta: TO263
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IXGA42N30C3 Datasheet (PDF)
ixga42n30c3.pdf
VCES = 300VIXGA42N30C3GenX3TM 300V IGBTIC110 = 42AIXGH42N30C3 VCE(sat) 1.85V High Speed PT IGBTs forIXGP42N30C350-150kHz switchingtfi typ = 65nsTO-263 (IXGA)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 300 VGVCGR TJ = 25C to 150C, RGE = 1M 300 V EC (TAB)VGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 V
ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf
IXGA48N60C3 VCES = 600VGenX3TM 600V IGBTIXGH48N60C3IC110 = 48AIXGP48N60C3VCE(sat) 2.5VHigh Speed PT IGBTs fortfi(typ) = 38ns40-100kHz switchingTO-263 (IXGA)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 600 VE (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VI
ixga48n60c3.pdf
GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3IC110 = 48A IXGP48N60C3 2.5VHigh-Speed PT IGBTs for VCE(sat) 40-100kHz Switching IXGH48N60C3tfi(typ) = 38nsSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V FeaturesVGES Continuous 20 V Optimized for Low Switching LossesVGEM Tra
ixga48n60a3.pdf
IXGA48N60A3 VCES = 600VGenX3TM 600VIXGP48N60A3IGBTs IC110 = 48AIXGH48N60A3VCE(sat) 1.35VUltra Low Vsat PT IGBTs forTO-263 (IXGA)up to 5kHz switchingGESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 150C 600 VTO-220 (IXGP)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC =
ixga4n100.pdf
Advanced Technical InformationIXGA 4N100VCES = 1000 VIGBTIXGP 4N100IC25 = 8 AVCE(sat) = 2.7 VSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C8 AIC90 TC = 90C4 AICM TC = 25C, 1 ms 16 ATO-263 AA (IXGA)SSOA VGE = 1
ixga48n60b3.pdf
IXGA48N60B3 VCES = 600VGenX3TM 600V IGBTIXGP48N60B3IC110 = 48AIXGH48N60B3VCE(sat) 1.8VMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-263 (IXGA)Symbol Test Conditions Maximum RatingsGEVCES TC = 25C to 150C 600 V (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 VTO-220 (IXGP)VGES Continuous 20 VVGEM Transient 30 VIC110 TC = 1
Otros transistores... IXGA20N120B3 , IXGA24N120C3 , IXGA24N60C , IXGA30N120B3 , IXGA30N60C3 , IXGA30N60C3C1 , IXGA30N60C3D4 , IXGA36N60A3 , CRG15T120BNR3S , IXGA48N60A3 , IXGA48N60B3 , IXGA48N60C3 , IXGA4N100 , IXGA50N60B4 , IXGA50N60C4 , IXGA7N60BD1 , IXGA7N60CD1 .
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