IXGA42N30C3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGA42N30C3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 223 W

|Vce|ⓘ - Tensión máxima colector-emisor: 300 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 42(110°C) A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.54 V @25℃

trⓘ - Tiempo de subida, typ: 23 nS

Coesⓘ - Capacitancia de salida, typ: 218 pF

Encapsulados: TO263

 Búsqueda de reemplazo de IXGA42N30C3 IGBT

- Selecciónⓘ de transistores por parámetros

 

IXGA42N30C3 datasheet

 ..1. Size:173K  ixys
ixga42n30c3.pdf pdf_icon

IXGA42N30C3

VCES = 300V IXGA42N30C3 GenX3TM 300V IGBT IC110 = 42A IXGH42N30C3 VCE(sat) 1.85V High Speed PT IGBTs for IXGP42N30C3 50-150kHz switching tfi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V G VCGR TJ = 25 C to 150 C, RGE = 1M 300 V E C (TAB) VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V

 9.1. Size:223K  ixys
ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf pdf_icon

IXGA42N30C3

IXGA48N60C3 VCES = 600V GenX3TM 600V IGBT IXGH48N60C3 IC110 = 48A IXGP48N60C3 VCE(sat) 2.5V High Speed PT IGBTs for tfi(typ) = 38ns 40-100kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 600 V E (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-247 (IXGH) VGES Continuous 20 V VGEM Transient 30 V I

 9.2. Size:240K  ixys
ixga48n60c3.pdf pdf_icon

IXGA42N30C3

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3 IC110 = 48A IXGP48N60C3 2.5V High-Speed PT IGBTs for VCE(sat) 40-100kHz Switching IXGH48N60C3 tfi(typ) = 38ns Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Features VGES Continuous 20 V Optimized for Low Switching Losses VGEM Tra

 9.3. Size:234K  ixys
ixga48n60a3.pdf pdf_icon

IXGA42N30C3

IXGA48N60A3 VCES = 600V GenX3TM 600V IXGP48N60A3 IGBTs IC110 = 48A IXGH48N60A3 VCE(sat) 1.35V Ultra Low Vsat PT IGBTs for TO-263 (IXGA) up to 5kHz switching G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 150 C 600 V TO-220 (IXGP) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC =

Otros transistores... IXGA20N120B3, IXGA24N120C3, IXGA24N60C, IXGA30N120B3, IXGA30N60C3, IXGA30N60C3C1, IXGA30N60C3D4, IXGA36N60A3, FGPF4633, IXGA48N60A3, IXGA48N60B3, IXGA48N60C3, IXGA4N100, IXGA50N60B4, IXGA50N60C4, IXGA7N60BD1, IXGA7N60CD1