IXGA48N60B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGA48N60B3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 48(110°C) A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 170 pF
Qgⓘ - Carga total de la puerta, typ: 115 nC
Paquete / Cubierta: TO263
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IXGA48N60B3 Datasheet (PDF)
ixga48n60b3.pdf
IXGA48N60B3 VCES = 600VGenX3TM 600V IGBTIXGP48N60B3IC110 = 48AIXGH48N60B3VCE(sat) 1.8VMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-263 (IXGA)Symbol Test Conditions Maximum RatingsGEVCES TC = 25C to 150C 600 V (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 VTO-220 (IXGP)VGES Continuous 20 VVGEM Transient 30 VIC110 TC = 1
ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf
IXGA48N60C3 VCES = 600VGenX3TM 600V IGBTIXGH48N60C3IC110 = 48AIXGP48N60C3VCE(sat) 2.5VHigh Speed PT IGBTs fortfi(typ) = 38ns40-100kHz switchingTO-263 (IXGA)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 600 VE (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VI
ixga48n60c3.pdf
GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3IC110 = 48A IXGP48N60C3 2.5VHigh-Speed PT IGBTs for VCE(sat) 40-100kHz Switching IXGH48N60C3tfi(typ) = 38nsSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V FeaturesVGES Continuous 20 V Optimized for Low Switching LossesVGEM Tra
ixga48n60a3.pdf
IXGA48N60A3 VCES = 600VGenX3TM 600VIXGP48N60A3IGBTs IC110 = 48AIXGH48N60A3VCE(sat) 1.35VUltra Low Vsat PT IGBTs forTO-263 (IXGA)up to 5kHz switchingGESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 150C 600 VTO-220 (IXGP)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC =
Otros transistores... IXGA24N60C , IXGA30N120B3 , IXGA30N60C3 , IXGA30N60C3C1 , IXGA30N60C3D4 , IXGA36N60A3 , IXGA42N30C3 , IXGA48N60A3 , NGD8201N , IXGA48N60C3 , IXGA4N100 , IXGA50N60B4 , IXGA50N60C4 , IXGA7N60BD1 , IXGA7N60CD1 , IXGB200N60B3 , IXGB75N60BD1 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2