IXGA4N100 Todos los transistores

 

IXGA4N100 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGA4N100

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1000V

Voltaje de saturación colector-emisor (Vce sat): 2.7V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 8A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 340

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO263(D2PAK)

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IXGA4N100 Datasheet (PDF)

1.1. ixga4n100.pdf Size:103K _igbt

IXGA4N100
IXGA4N100

Advanced Technical Information IXGA 4N100 VCES = 1000 V IGBT IXGP 4N100 IC25 = 8 A VCE(sat) = 2.7 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TO-220AB (IXGP) VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V G C E IC25 TC = 25°C8 A IC90 TC = 90°C4 A ICM TC = 25°C, 1 ms 16 A TO-263 AA (IXGA) SSOA VGE = 1

5.1. ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf Size:223K _ixys

IXGA4N100
IXGA4N100

IXGA48N60C3 VCES = 600V GenX3TM 600V IGBT IXGH48N60C3 IC110 = 48A IXGP48N60C3 ? VCE(sat) ? ? 2.5V ? ? High Speed PT IGBTs for tfi(typ) = 38ns 40-100kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25C to 150C 600 V E (TAB) VCGR TJ = 25C to 150C, RGE = 1M? 600 V TO-247 (IXGH) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C ( Limi

5.2. ixga48n60a3.pdf Size:234K _igbt

IXGA4N100
IXGA4N100

IXGA48N60A3 VCES = 600V GenX3TM 600V IXGP48N60A3 IGBTs IC110 = 48A IXGH48N60A3 ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra Low Vsat PT IGBTs for TO-263 (IXGA) up to 5kHz switching G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25°C to 150°C 600 V TO-220 (IXGP) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC =

 5.3. ixga42n30c3.pdf Size:173K _igbt

IXGA4N100
IXGA4N100

VCES = 300V IXGA42N30C3 GenX3TM 300V IGBT IC110 = 42A IXGH42N30C3 ≤ ≤ VCE(sat) ≤ 1.85V ≤ ≤ High Speed PT IGBTs for IXGP42N30C3 50-150kHz switching tfi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V E C (TAB) VGES Continuous ±20 V TO-247 (IXGH) VGEM Transient ±30 V

5.4. ixga48n60c3.pdf Size:240K _igbt

IXGA4N100
IXGA4N100

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3 IC110 = 48A IXGP48N60C3 ≤ ≤ 2.5V ≤ ≤ High-Speed PT IGBTs for VCE(sat) ≤ 40-100kHz Switching IXGH48N60C3 tfi(typ) = 38ns Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V Features VGES Continuous ± 20 V Optimized for Low Switching Losses VGEM Tra

 5.5. ixga48n60b3.pdf Size:221K _igbt

IXGA4N100
IXGA4N100

IXGA48N60B3 VCES = 600V GenX3TM 600V IGBT IXGP48N60B3 IC110 = 48A IXGH48N60B3 ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-220 (IXGP) VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 TC = 1

Otros transistores... IXGA30N60C3 , IXGA30N60C3C1 , IXGA30N60C3D4 , IXGA36N60A3 , IXGA42N30C3 , IXGA48N60A3 , IXGA48N60B3 , IXGA48N60C3 , IXGP7N60B , IXGA50N60B4 , IXGA50N60C4 , IXGA7N60BD1 , IXGA7N60CD1 , IXGB200N60B3 , IXGB75N60BD1 , IXGE200N60B , IXGF20N250 .

 

 
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