IXGA7N60CD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGA7N60CD1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 75 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 14 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 10 nS
Coesⓘ - Capacitancia de salida, typ: 50 pF
Qgⓘ - Carga total de la puerta, typ: 25 nC
Paquete / Cubierta: TO263
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IXGA7N60CD1 Datasheet (PDF)
ixga7n60cd1.pdf
IXGA 7N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGP 7N60CD1 IC25 = 14 Awith DiodeVCE(sat)typ = 2.0 VLightspeedTM Seriestfi = 45 nsPreliminary DataSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C 14 ATO-263 AA (IXGA)IC90 TC
ixga7n60c.pdf
VCES = 600 VIXGA 7N60CHiPerFASTTM IGBTIC25 = 14 AIXGP 7N60CLightspeedTM SeriesVCE(sat) = 2.7 Vtfi = 45 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30
ixga7n60c ixgp7n60c.pdf
VCES = 600 VIXGA 7N60CHiPerFASTTM IGBTIC25 = 14 AIXGP 7N60CLightspeedTM SeriesVCE(sat) = 2.7 Vtfi = 45 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30
ixga7n60b.pdf
VCES = 600 VHiPerFASTTM IGBT IXGA 7N60BIC25 = 14 AIXGP 7N60BVCE(sat) = 2 Vtfi = 150 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30 AGC (TAB)ESSOA
ixga7n60b ixgp7n60b.pdf
VCES = 600 VHiPerFASTTM IGBT IXGA 7N60BIC25 = 14 AIXGP 7N60BVCE(sat) = 2 Vtfi = 150 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30 AGC (TAB)ESSOA
ixga7n60bd1.pdf
Advanced Technical InformationIXGA 7N60BD1 VCES = 600 VHiPerFASTTM IGBTIXGP 7N60BD1 IC25 = 14 Awith DiodeVCE(sat) = 2.0 Vtfi = 150nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C 14 ATO-263 AA (IXGA)IC90 TC = 90C 7
Otros transistores... IXGA42N30C3 , IXGA48N60A3 , IXGA48N60B3 , IXGA48N60C3 , IXGA4N100 , IXGA50N60B4 , IXGA50N60C4 , IXGA7N60BD1 , IKW50N60H3 , IXGB200N60B3 , IXGB75N60BD1 , IXGE200N60B , IXGF20N250 , IXGF20N300 , IXGF25N250 , IXGF25N300 , IXGF30N400 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2