IXGF25N300 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGF25N300
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 114 W
|Vce|ⓘ - Tensión máxima colector-emisor: 3000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 27 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 240 nS
Coesⓘ - Capacitancia de salida, typ: 98 pF
Qgⓘ - Carga total de la puerta, typ: 75 nC
Paquete / Cubierta: ISOPLUS-I4-PAK
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IXGF25N300 Datasheet (PDF)
ixgf25n300.pdf
VCES = 3000VHigh Voltage IGBT IXGF25N300For Capacitor Discharge IC25 = 27AApplications VCE(sat) 3.0V ( Electrically Isolated Tab)Symbol Test Conditions Maximum Ratings ISOPLUS i4-PakTMVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient 30 VIsolated Tab5IC25 TC = 25C 27 AI
ixgf25n250.pdf
VCES = 2500VHigh Voltage IGBT IXGF25N250IC25 = 30AFor Capacitor DischargeApplicationsVCE(sat) 2.9V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 V12VCGR TJ = 25C to 150C, RGE = 1M 2500 V5VGES Continuous 20 VISOLATED TABVGEM Transient 30 V1 = Gate 5 = Collector
ixgf20n300.pdf
VCES = 3000VHigh Voltage IGBT IXGF20N300For Capacitor DischargeIC25 = 22AApplicationsVCE(sat) 3.2V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 V12VGES Continuous 20 VIsolated Tab5VGEM Transient 30 VIC25 TC = 25C 22 A1
ixgf20n250.pdf
High Voltage IGBT VCES = 2500VIXGF20N250For Capacitor DischargeIC25 = 23AApplicationsVCE(sat) 3.1V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 V12VGEM Transient 30 VIsolated Tab5IC25 TC = 25C 23 A1
Otros transistores... IXGA7N60BD1 , IXGA7N60CD1 , IXGB200N60B3 , IXGB75N60BD1 , IXGE200N60B , IXGF20N250 , IXGF20N300 , IXGF25N250 , TGPF30N43P , IXGF30N400 , IXGF32N170 , IXGF36N300 , IXGH100N30B3 , IXGH100N30C3 , IXGH10N170 , IXGH10N170A , IXGH10N300 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2