IXGH100N30B3 Todos los transistores

 ..1. Size:155K  ixys
 ixgh100n30b3.pdf

Preliminary Technical Information TM VCES = 300V GenX3 300V IGBT IXGH100N30B3 IC110 = 100A VCE(sat) 1.7V Medium speed low Vsat PT tfi(typ) = 33ns IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C, RGE = 1M 300 V VGES Continuous 20 V VGEM Transient 30 V G TAB

 4.1. Size:101K  ixys
 ixgh100n30c3.pdf

Preliminary Technical Information IXGH100N30C3 VCES = 300V GenX3TM 300V IGBT IC110 = 100A VCE(sat) 1.85V High Speed PT IGBTs for tfi typ = 94ns 50-150kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C, RGE = 1M 300 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 V G

 8.1. Size:224K  ixys
 ixgh10n300.pdf

Advance Technical Information High Voltage IGBT VCES = 3000V IXGH10N300 IC90 = 10A VCE(sat) 3.5V For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V G (TAB) VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25 C 18 A G = Gate C

 8.2. Size:413K  ixys
 ixgh10n100au1 ixgh10n100u1.pdf

 8.3. Size:34K  ixys
 ixgh10n100a.pdf

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH 10 N100 1000 V 20 A 3.5 V High speed IGBT IXGH 10 N100A 1000 V 20 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C20 A G = Gate, C = Collector, IC90 TC = 90 C10 A E = Emitter, TAB = Col

 8.4. Size:56K  ixys
 ixgp10n60-a ixga10n60-a ixgh10n60-a.pdf

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V TO-263 AA (IXGA) VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C20 A C (TAB) E

 8.5. Size:565K  ixys
 ixgh10n170a ixgt10n170a.pdf

IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C10 A TO-247 AD (IXGH) IC90 TC = 90 C5 A ICM

 8.6. Size:42K  ixys
 ixgh10n60.pdf

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V TO-263 AA (IXGA) VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C20 A C (TAB) E

 8.7. Size:562K  ixys
 ixgh10n170a.pdf

IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C10 A TO-247 AD (IXGH) IC90 TC = 90 C5 A ICM

 8.8. Size:34K  ixys
 ixgh10n100.pdf

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH 10 N100 1000 V 20 A 3.5 V High speed IGBT IXGH 10 N100A 1000 V 20 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C20 A G = Gate, C = Collector, IC90 TC = 90 C10 A E = Emitter, TAB = Col

 8.9. Size:42K  ixys
 ixgh10n60a.pdf

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V TO-263 AA (IXGA) VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C20 A C (TAB) E

 8.10. Size:187K  ixys
 ixgh10n170.pdf

VCES = 1700V High Voltage IXGH10N170 IC90 = 10A IGBT IXGT10N170 VCE(sat) 4.0V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 1700 V C C (TAB) E VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transient 30 V IC25 TC = 25 C 20 A G E IC90 TC = 90 C 10 A C (TAB) ICM TC = 25 C,