IXGH16N60C2D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH16N60C2D1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3(max) V @25℃

trⓘ - Tiempo de subida, typ: 17 nS

Coesⓘ - Capacitancia de salida, typ: 72 pF

Encapsulados: TO247

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IXGH16N60C2D1 datasheet

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 ixgh16n60c2d1.pdf pdf_icon

IXGH16N60C2D1

HiPerFASTTM IGBTs VCES = 600V IXGA16N60C2D1 C2-Class High Speed IC110 = 16A IXGP16N60C2D1 w/ Diode VCE(sat) 3.0V IXGH16N60C2D1 tfi(typ) = 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C C

 5.1. Size:214K  ixys
 ixgh16n60b2d1.pdf pdf_icon

IXGH16N60C2D1

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2D1 B2-Class High Speed IC110 = 16A IXGP16N60B2D1 w/ Diode VCE(sat) 2.3V IXGH16N60B2D1 tfi(typ) = 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C C (

 7.1. Size:193K  ixys
 ixgt16n170 ixgh16n170.pdf pdf_icon

IXGH16N60C2D1

IXGH 16N170 VCES = 1700 V High Voltage IXGT 16N170 IC25 = 32 A IGBT VCE(sat) = 3.5 V TO-268 (D3-Pak) (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25 C32 A IC90 TC = 90 C16 A ICM TC = 25 C, 1 ms 80 A C (TAB) SSOA VG

 7.2. Size:165K  ixys
 ixgh16n170a.pdf pdf_icon

IXGH16N60C2D1

IXGH 16N170A VCES = 1700 V High Voltage IXGT 16N170A IC25 = 16 A IGBT IXGH 16N170AH1 VCE(sat) = 5.0 V IXGT 16N170AH1 tfi(typ) = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings H1 VCES TJ = 25 C to 150 C 1700 V TO-268 (IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V VGEM Transient 30 V G E IC25 TC = 25 C16 A C (TAB) IC90 T

MOSTRAR MÁS

Otros transistores... IXGH120N30B3, IXGH120N30C3, IXGH12N120A3, IXGH15N120B2D1, IXGH16N170, IXGH16N170A, IXGH16N170AH1, IXGH16N60B2D1, SGT40N60FD2PT, IXGH20N100A3, IXGH20N120, IXGH20N120A3, IXGH20N120B, IXGH20N140C3H1, IXGH22N170, IXGH24N120C3, IXGH24N120C3H1