IXGH24N60C4D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH24N60C4D1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 190 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 56 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.28 V @25℃

trⓘ - Tiempo de subida, typ: 33 nS

Coesⓘ - Capacitancia de salida, typ: 86 pF

Encapsulados: TO247

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IXGH24N60C4D1 datasheet

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 ixgh24n60c4d1.pdf pdf_icon

IXGH24N60C4D1

VCES = 600V High-Gain IGBT IXGH24N60C4D1 IC110 = 24A w/ Diode VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C Tab E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30 V E = Emitter

 3.1. Size:92K  ixys
 ixgh24n60c4.pdf pdf_icon

IXGH24N60C4D1

Advance Technical Information High-Gain IGBTs VCES = 600V IXGP24N60C4 IC110 = 24A IXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBTs TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IX

 4.1. Size:101K  ixys
 ixgh24n60cd1.pdf pdf_icon

IXGH24N60C4D1

IXGH 24N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 24N60CD1 IC25 = 48 A with Diode VCE(sat) = 2.5 V Lightspeed Series Preliminary data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110 C24 A

 4.2. Size:52K  ixys
 ixgh24n60c.pdf pdf_icon

IXGH24N60C4D1

IXGH 24N60C VCES = 600 V HiPerFASTTM IGBT IXGT 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110

MOSTRAR MÁS

Otros transistores... IXGH20N140C3H1, IXGH22N170, IXGH24N120C3, IXGH24N120C3H1, IXGH24N170, IXGH24N170A, IXGH24N170AH1, IXGH24N60C4, GT30J122, IXGH25N160, IXGH25N250, IXGH28N120B, IXGH28N120BD1, IXGH28N140B3H1, IXGH28N60B3D1, IXGH28N60BD1, IXGH2N250