IXGH28N60B3D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH28N60B3D1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 190 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 66 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 24 nS

Coesⓘ - Capacitancia de salida, typ: 176 pF

Encapsulados: TO247

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IXGH28N60B3D1 datasheet

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IXGH28N60B3D1

Advance Technical Information IXGH28N60B3D1 VCES = 600V PolarHVTM IGBT IC110 = 28A VCE(sat) 1.8V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 66 A IC110 TC = 110 C 28 A IF110 TC = 110 C 10 A

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IXGH28N60B3D1

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V E VGES Continuous 20 V C (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 8

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IXGH28N60B3D1

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A

 4.3. Size:588K  ixys
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IXGH28N60B3D1

Low VCE(sat) IGBT IXGH 28N60B VCES = 600 V IXGT 28N60B IC25 = 40 A VCE(sat) = 2.0 V Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C40 A (IXGH) IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A C (TAB) SSOA VGE = 15 V,

MOSTRAR MÁS

Otros transistores... IXGH24N170AH1, IXGH24N60C4, IXGH24N60C4D1, IXGH25N160, IXGH25N250, IXGH28N120B, IXGH28N120BD1, IXGH28N140B3H1, IRGP4062D, IXGH28N60BD1, IXGH2N250, IXGH30N120B3, IXGH30N120B3D1, IXGH30N120C3H1, IXGH30N60B2, IXGH30N60B2D1, IXGH30N60B4