IXGH28N60B3D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGH28N60B3D1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 190 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 66 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 24 nS
Coesⓘ - Capacitancia de salida, typ: 176 pF
Qgⓘ - Carga total de la puerta, typ: 62 nC
Paquete / Cubierta: TO247
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IXGH28N60B3D1 Datasheet (PDF)
ixgh28n60b3d1.pdf
Advance Technical InformationIXGH28N60B3D1 VCES = 600VPolarHVTM IGBTIC110 = 28A VCE(sat) 1.8V TO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 V C (TAB)CEIC25 TC = 25C 66 AIC110 TC = 110C 28 AIF110 TC = 110C 10 A
ixgh28n60bd1 ixgt28n60bd1.pdf
Low VCE(sat) IXGH 28N60BD1 VCES = 600 VIGBT with Diode IXGT 28N60BD1 IC25 = 40 AVCE(sat) = 2.0 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VEVGES Continuous 20 VC (TAB)VGEM Transient 30 V TO-247 AD(IXGH)IC25 TC = 25C40 AIC90 TC = 90C28 AICM TC = 25C, 1 ms 8
ixgh28n60bd1.pdf
Low VCE(sat) IXGH 28N60BD1 VCES = 600 VIGBT with Diode IXGT 28N60BD1 IC25 = 40 AVCE(sat) = 2.0 VCombi PackSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 V TO-247 AD(IXGH)IC25 TC = 25C40 AIC90 TC = 90C28 AICM TC = 25C, 1 ms 80 A
ixgh28n60b.pdf
Low VCE(sat) IGBT IXGH 28N60B VCES = 600 VIXGT 28N60B IC25 = 40 AVCE(sat) = 2.0 VSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C40 A(IXGH)IC90 TC = 90C28 AICM TC = 25C, 1 ms 80 AC (TAB)SSOA VGE = 15 V,
Otros transistores... IXGH24N170AH1 , IXGH24N60C4 , IXGH24N60C4D1 , IXGH25N160 , IXGH25N250 , IXGH28N120B , IXGH28N120BD1 , IXGH28N140B3H1 , FGW75N60HD , IXGH28N60BD1 , IXGH2N250 , IXGH30N120B3 , IXGH30N120B3D1 , IXGH30N120C3H1 , IXGH30N60B2 , IXGH30N60B2D1 , IXGH30N60B4 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2