IXGH30N60C3C1 Todos los transistores

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IXGH30N60C3C1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH30N60C3C1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 3V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 60A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 47

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXGH30N60C3C1 Datasheet (PDF)

1.1. ixgh30n60b2 ixgt30n60b2.pdf Size:578K _ixys

IXGH30N60C3C1
IXGH30N60C3C1

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat) < 1.8 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V

1.2. ixgh30n60c2 ixgt30n60c2.pdf Size:583K _ixys

IXGH30N60C3C1
IXGH30N60C3C1

VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C (limited by leads) 70 A TO-247 (IXGH) IC110 TC = 110C30 A

 1.3. ixgh30n60c2d1 ixgt30n60c2d1.pdf Size:164K _ixys

IXGH30N60C3C1
IXGH30N60C3C1

VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25C (limited by leads) 70 A IC110 TC = 110C

1.4. ixgh30n60b2d1 ixgt30n60b2d1.pdf Size:600K _ixys

IXGH30N60C3C1
IXGH30N60C3C1

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat) < 1.8 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 3

 1.5. ixgh30n60c2d1.pdf Size:159K _igbt

IXGH30N60C3C1
IXGH30N60C3C1

VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C (limited by leads) 70 A IC11

1.6. ixgh30n60b2d1.pdf Size:506K _igbt

IXGH30N60C3C1
IXGH30N60C3C1

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat) < 1.8 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Tr

1.7. ixgh30n60b2.pdf Size:576K _igbt

IXGH30N60C3C1
IXGH30N60C3C1

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat) < 1.8 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transi

1.8. ixgh30n60c3.pdf Size:269K _igbt

IXGH30N60C3C1
IXGH30N60C3C1

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 ≤ VCE(sat) ≤ ≤ 3.0V ≤ ≤ IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-220AB (IXGP) VGES Continuous ± 20 V

1.9. ixgh30n60c2.pdf Size:580K _igbt

IXGH30N60C3C1
IXGH30N60C3C1

VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 70 A TO-247 (IXGH) IC110 TC =

1.10. ixgh30n60b.pdf Size:52K _igbt

IXGH30N60C3C1
IXGH30N60C3C1

IXGH30N60B VCES = 600 V HiPerFASTTM IGBT IXGT30N60B IC25 = 60 A VCE(sat) = 1.8 V tfi = 100 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) G C VGEM Transient ±30 V E IC25 TC = 25°C60 A IC110 TC = 110°C30 A TO-268 (D3) ICM TC = 25°C, 1 ms 120 A (IXGT) SSOA

1.11. ixgh30n60c3c1.pdf Size:278K _igbt

IXGH30N60C3C1
IXGH30N60C3C1

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode ≤ ≤ VCE(sat) ≤ 3.0V ≤ ≤ IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RG

1.12. ixgh30n60bd1.pdf Size:112K _igbt

IXGH30N60C3C1
IXGH30N60C3C1

IXGH 30N60BD1 HiPerFASTTM IGBT VCES = 600 V IXGT 30N60BD1 IC25 = 60 A with Diode VCE(sat) = 1.8 V tfi(typ) = 100 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V E VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V IC25 TC = 25°C60 A TO-247 AD (IXGH) IC90 TC = 90°C30 A ICM TC = 25°C, 1

1.13. ixgh30n60bu1.pdf Size:138K _igbt

IXGH30N60C3C1
IXGH30N60C3C1

HiPerFASTTM IGBT IXGH 30N60BU1 VCES = 600 V IXGT 30N60BU1 IC25 = 60 A with Diode VCE(sat) = 1.8 V Combi Pack tfi = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 150°C 600 V C (TAB) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V IC25 TC = 25°C60 A C (TAB) IC110 TC = 110°C30 A G ICM

1.14. ixgh30n60c3d1.pdf Size:215K _igbt

IXGH30N60C3C1
IXGH30N60C3C1

GenX3TM 600V IGBTs VCES = 600V IXGH30N60C3D1 w/ Diode IC110 = 30A IXGT30N60C3D1 ≤ VCE(sat) ≤ 3.0V ≤ ≤ ≤ tfi(typ) = 47ns High-Speed PT IGBTs for 40-100 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C (Tab) VGES Continuous ± 20 V VGEM Transient ± 30 V TO-247 (IXG

1.15. ixgh30n60b4.pdf Size:81K _igbt

IXGH30N60C3C1
IXGH30N60C3C1

Preliminary Technical Information High-Gain IGBT VCES = 600V IXGH30N60B4 IC110 = 30A ≤ ≤ VCE(sat) ≤ 1.7V ≤ ≤ tfi(typ) = 88ns Medium-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C Tab E VGEM Transient ±30 V IC25 TC = 25°C 66 A G = Ga

Otros transistores... IXGH30N120B3D1 , IXGH30N120C3H1 , IXGH30N60B2 , IXGH30N60B2D1 , IXGH30N60B4 , IXGH30N60C2 , IXGH30N60C2D1 , IXGH30N60C3 , G7N60C3D , IXGH30N60C3D1 , IXGH32N100A3 , IXGH32N120A3 , IXGH32N170 , IXGH32N170A , IXGH32N90B2 , IXGH32N90B2D1 , IXGH34N60B2 .

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