IXGH30N60C3D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH30N60C3D1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 220 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.6 V @25℃

trⓘ - Tiempo de subida, typ: 26 nS

Coesⓘ - Capacitancia de salida, typ: 78 pF

Encapsulados: TO247

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IXGH30N60C3D1 datasheet

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IXGH30N60C3D1

GenX3TM 600V IGBTs VCES = 600V IXGH30N60C3D1 w/ Diode IC110 = 30A IXGT30N60C3D1 VCE(sat) 3.0V tfi(typ) = 47ns High-Speed PT IGBTs for 40-100 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C (Tab) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXG

 3.1. Size:269K  ixys
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IXGH30N60C3D1

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

 3.2. Size:278K  ixys
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IXGH30N60C3D1

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RG

 4.1. Size:583K  ixys
ixgh30n60c2 ixgt30n60c2.pdf pdf_icon

IXGH30N60C3D1

VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C (limited by leads) 70 A TO-247 (IXGH) IC110 TC =

Otros transistores... IXGH30N120C3H1, IXGH30N60B2, IXGH30N60B2D1, IXGH30N60B4, IXGH30N60C2, IXGH30N60C2D1, IXGH30N60C3, IXGH30N60C3C1, FGD4536, IXGH32N100A3, IXGH32N120A3, IXGH32N170, IXGH32N170A, IXGH32N90B2, IXGH32N90B2D1, IXGH34N60B2, IXGH35N120B