IXGH32N90B2D1 Todos los transistores

 

IXGH32N90B2D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH32N90B2D1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 900 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 64 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 22 nS
   Coesⓘ - Capacitancia de salida, typ: 146 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXGH32N90B2D1 Datasheet (PDF)

 ..1. Size:219K  ixys
ixgh32n90b2d1 ixgt32n90b2d1.pdf pdf_icon

IXGH32N90B2D1

Advance Technical InformationVCES = 900 VIXGH 32N90B2D1HiPerFASTTM IGBTIC25 = 64 AIXGT 32N90B2D1with Fast DiodeVCE(sat) = 2.7 Vtfi typ = 150 nsB2-ClassHigh Speed IGBTs withUltrafast DiodeSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 MW 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient

 ..2. Size:217K  ixys
ixgh32n90b2d1.pdf pdf_icon

IXGH32N90B2D1

Advance Technical InformationVCES = 900 VIXGH 32N90B2D1HiPerFASTTM IGBTIC25 = 64 AIXGT 32N90B2D1with Fast DiodeVCE(sat) = 2.7 Vtfi typ = 150 nsB2-ClassHigh Speed IGBTs withUltrafast DiodeSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 MW 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient

 3.1. Size:202K  ixys
ixgh32n90b2 ixgt32n90b2.pdf pdf_icon

IXGH32N90B2D1

Advance Technical InformationIXGH 32N90B2 VCES = 900 VHiPerFASTTM IGBTIXGT 32N90B2 IC25 = 64 AB2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 150 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25C (limited by leads)

 3.2. Size:199K  ixys
ixgh32n90b2.pdf pdf_icon

IXGH32N90B2D1

Advance Technical InformationIXGH 32N90B2 VCES = 900 VHiPerFASTTM IGBTIXGT 32N90B2 IC25 = 64 AB2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 150 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25C (limited by leads)

Otros transistores... IXGH30N60C3 , IXGH30N60C3C1 , IXGH30N60C3D1 , IXGH32N100A3 , IXGH32N120A3 , IXGH32N170 , IXGH32N170A , IXGH32N90B2 , IXGH60N60 , IXGH34N60B2 , IXGH35N120B , IXGH35N120C , IXGH36N60A3 , IXGH36N60A3D4 , IXGH36N60B3 , IXGH36N60B3C1 , IXGH36N60B3D1 .

History: SMC7G15US60 | MMG100J060U | MMG200D170B | FD600R17KF6C_B2 | FF200R06KE3 | APTGF150A120T | DIM400DDM12-A

 

 
Back to Top

 


 
.