IXGH36N60B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGH36N60B3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 250
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 92
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.5
Tensión máxima de puerta-umbral |VGE(th)|, V: 5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 24
Capacitancia de salida (Cc), typ, pF: 120
Carga total de la puerta (Qg), typ, nC: 80
Paquete / Cubierta: TO247
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IXGH36N60B3 Datasheet (PDF)
ixgh36n60b3.pdf
Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH36N60B3IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBTfor 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VC TabEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 92 A
ixgh36n60b3d4.pdf
VCES = 600VGenX3TM 600V IGBTIXGH36N60B3D4IC110 = 36AVCE(sat) 1.8VMedium speed low Vsat PTIGBT for 5-40kHz switchingTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 V GTABCVGEM Transient 30 VEIC110 TC = 110C 36 AIF110 TC = 110C 10 A
ixgh36n60b3c1.pdf
Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH36N60B3C1w/ SiC Anti-Parallel IC110 = 36ADiode VCE(sat) 1.8Vtfi(typ) = 100nsMedium Speed Low Vsat PTIGBT for 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VG (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 V CEVGES Continuous 20
ixgh36n60b3d1.pdf
GenX3TM 600V IGBT VCES = 600VIXGH36N60B3D1w/ Diode IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBTfor 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VIC110 TC = 110C 36 AG = Gate C = Col
Otros transistores... IXGH32N170A , IXGH32N90B2 , IXGH32N90B2D1 , IXGH34N60B2 , IXGH35N120B , IXGH35N120C , IXGH36N60A3 , IXGH36N60A3D4 , IKW75N60T , IXGH36N60B3C1 , IXGH36N60B3D1 , IXGH36N60B3D4 , IXGH40N120A2 , IXGH40N120B2D1 , IXGH40N120C3 , IXGH40N120C3D1 , IXGH40N60B .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ