IXGH40N120A2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH40N120A2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 360 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2(max) V @25℃

trⓘ - Tiempo de subida, typ: 41 nS

Coesⓘ - Capacitancia de salida, typ: 165 pF

Encapsulados: TO247

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IXGH40N120A2 datasheet

 ..1. Size:168K  ixys
 ixgh40n120a2.pdf pdf_icon

IXGH40N120A2

IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 VCES = 1200 V High Voltage IGBT IXGT 40N120A2 IC25 = 75 A Low VCE(sat) VCE(sat) 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VCES TJ = 25 C to 150 C 1200 V VCES TJ = 25 C to 150 C 1200 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25 C, IGBT chip capabilit

 4.1. Size:213K  ixys
 ixgh40n120b2d1.pdf pdf_icon

IXGH40N120A2

High Voltage IGBTs VCES = 1200V IXGH40N120B2D1 w/Diode IXGT40N120B2D1 IC110 = 40A VCE(sat) 3.5V tfi(typ) = 140ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V G C (TAB) C VGEM Transient 30 V E IC25 TC = 25 C (Limited by Lead) 75 A IC110 TC =

 4.2. Size:169K  ixys
 ixgh40n120c3.pdf pdf_icon

IXGH40N120A2

Preliminary Technical Information TM VCES = 1200V GenX3 1200V IGBT IXGH40N120C3 IC110 = 40A VCE(sat) 4.4V High speed PT IGBTs tfi(typ) = 57ns for 20 - 50 kHz switching Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V TO-247 (IXGH) VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25

 4.3. Size:196K  ixys
 ixgh40n120c3d1.pdf pdf_icon

IXGH40N120A2

Preliminary Technical Information VCES = 1200V GenX3TM C3-Class IXGH40N120C3D1 IC110 = 40A IGBT w/Diode VCE(sat) 4.4V tfi(typ) = 57ns High Speed PT IGBT for 20 - 50 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G TAB

MOSTRAR MÁS

Otros transistores... IXGH35N120B, IXGH35N120C, IXGH36N60A3, IXGH36N60A3D4, IXGH36N60B3, IXGH36N60B3C1, IXGH36N60B3D1, IXGH36N60B3D4, IHW20N120R3, IXGH40N120B2D1, IXGH40N120C3, IXGH40N120C3D1, IXGH40N60B, IXGH40N60B2, IXGH40N60B2D1, IXGH40N60C, IXGH40N60C2