IXGH40N60C2D1 Todos los transistores

 

IXGH40N60C2D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH40N60C2D1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Coesⓘ - Capacitancia de salida, typ: 220 pF
   Paquete / Cubierta: TO247
 

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IXGH40N60C2D1 datasheet

 ..1. Size:162K  ixys
ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf pdf_icon

IXGH40N60C2D1

HiPerFASTTM IGBT IXGH40N60C2D1 VCES = 600V IXGT40N60C2D1 IC25 = 75A with Diode IXGJ40N60C2D1 VCE(SAT) 2.7V tfi(typ) = 32ns C2-Class High Speed IGBTs TO-247(IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C (TAB) C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V TO-268 (D3) ( IXGT) VGEM Transient 30 V

 ..2. Size:168K  ixys
ixgh40n60c2d1.pdf pdf_icon

IXGH40N60C2D1

HiPerFASTTM IGBTs VCES = 600V IXGT40N60C2D1 IC110 = 40A w/ Diode IXGJ40N60C2D1 VCE(SAT) 2.7V IXGH40N60C2D1 tfi(typ) = 32ns C2-Class High Speed IGBTs TO-268 (IXGT) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-268 (IXGJ) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V

 3.1. Size:145K  ixys
ixgh40n60c2.pdf pdf_icon

IXGH40N60C2D1

VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25 C (limited by leads) 75 A IC110 TC = 1

 3.2. Size:149K  ixys
ixgh40n60c2 ixgt40n60c2.pdf pdf_icon

IXGH40N60C2D1

VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25 C (limited by leads) 75 A IC110 TC = 1

Otros transistores... IXGH40N120B2D1 , IXGH40N120C3 , IXGH40N120C3D1 , IXGH40N60B , IXGH40N60B2 , IXGH40N60B2D1 , IXGH40N60C , IXGH40N60C2 , IRG7R313U , IXGH42N30C3 , IXGH45N120 , IXGH48N60A3 , IXGH48N60A3D1 , IXGH48N60B3 , IXGH48N60B3C1 , IXGH48N60B3D1 , IXGH48N60C3 .

 

 
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