IXGH48N60C3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH48N60C3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 300 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃

trⓘ - Tiempo de subida, typ: 26 nS

Coesⓘ - Capacitancia de salida, typ: 207 pF

Encapsulados: TO247

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IXGH48N60C3 datasheet

..1. Size:240K ixys
ixgh48n60c3.pdf pdf_icon

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3 IC110 = 48A IXGP48N60C3 2.5V High-Speed PT IGBTs for VCE(sat) 40-100kHz Switching IXGH48N60C3 tfi(typ) = 38ns Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Features VGES Continuous 20 V Optimized for Low Switching Losses VGEM Tra

0.1. Size:223K ixys
ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf pdf_icon

IXGA48N60C3 VCES = 600V GenX3TM 600V IGBT IXGH48N60C3 IC110 = 48A IXGP48N60C3 VCE(sat) 2.5V High Speed PT IGBTs for tfi(typ) = 38ns 40-100kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 600 V E (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-247 (IXGH) VGES Continuous 20 V VGEM Transient 30 V I

0.2. Size:201K ixys
ixgh48n60c3d1.pdf pdf_icon

VCES = 600V IXGH48N60C3D1 GenX3TM 600V IGBT IC110 = 48A with Diode VCE(sat) 2.5V tfi(typ) = 38ns High speed PT IGBT for 40-100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C E VGEM Transient 30 V ( TAB ) IC25 TC = 25 C (Limited by Leads)

0.3. Size:183K ixys
ixgh48n60c3c1.pdf pdf_icon

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60C3C1 w/ SiC Anti-Parallel IC110 = 48A Diode VCE(sat) 2.5V tfi(typ) = 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G C VGES Continuous 20 V E ( TAB ) VGEM

Otros transistores... IXGH40N60C2D1, IXGH42N30C3, IXGH45N120, IXGH48N60A3, IXGH48N60A3D1, IXGH48N60B3, IXGH48N60B3C1, IXGH48N60B3D1, CRG60T60AK3HD, IXGH48N60C3C1, IXGH48N60C3D1, IXGH4N250C, IXGH50N120C3, IXGH50N60B2, IXGH50N60B4, IXGH50N60B4D1, IXGH50N60C2

IXGH48N60C3 Todos los transistores