IXGH50N120C3 Todos los transistores

 

IXGH50N120C3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH50N120C3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 460 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.2(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 34 nS
   Coesⓘ - Capacitancia de salida, typ: 330 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXGH50N120C3 Datasheet (PDF)

 ..1. Size:169K  ixys
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IXGH50N120C3

Preliminary Technical InformationTMVCES = 1200VGenX3 1200V IGBT IXGH50N120C3IC110 = 50AVCE(sat) 4.2VHigh speed PT IGBTstfi(typ) = 64nsfor 20 - 50 kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 V GTABCVGEM Transient 30 V EIC

 7.1. Size:64K  ixys
ixgh50n60a.pdf pdf_icon

IXGH50N120C3

IXGH50N60A VCES = 600 VHiPerFASTTM IGBTIXGH50N60ASIC25 = 75 ASurface MountableVCE(sat) = 2.7 Vtfi = 275 nsTO-247 SMDSymbol Test Conditions Maximum Ratings (50N60AS)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VIC25 TC = 25C75 ATO-247 ADIC90 TC = 90C50 A(50N60A)ICM TC = 2

 7.2. Size:158K  ixys
ixgh50n90b2.pdf pdf_icon

IXGH50N120C3

Advance Technical InformationVCES = 900 VIXGH 50N90B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N90B2VCE(sat) = 2.7 Vtfi typ = 200 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limit

 7.3. Size:196K  ixys
ixgh50n60c4d1.pdf pdf_icon

IXGH50N120C3

VCES = 600VHigh-Gain IGBTs IXGQ50N60C4D1IC110 = 46Aw/ Diode IXGH50N60C4D1 VCE(sat) 2.3V High-Speed PT Trench IGBTsTO-3P (IXGQ)GCESymbol Test Conditions Maximum RatingsTabVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 90 AIC110 TC = 110

Otros transistores... IXGH48N60A3D1 , IXGH48N60B3 , IXGH48N60B3C1 , IXGH48N60B3D1 , IXGH48N60C3 , IXGH48N60C3C1 , IXGH48N60C3D1 , IXGH4N250C , JT075N065WED , IXGH50N60B2 , IXGH50N60B4 , IXGH50N60B4D1 , IXGH50N60C2 , IXGH50N60C4 , IXGH50N60C4D1 , IXGH50N90B2 , IXGH50N90B2D1 .

History: IXGH32N100A3 | NGTB30N120L2WG | MMG300D170B | 2MBI225VN-120-50 | FF200R12KT3 | IRG4PC30FPBF | IXYH20N65B3

 

 
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