IXGH50N60C4D1 Todos los transistores

 

IXGH50N60C4D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH50N60C4D1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 66 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXGH50N60C4D1 Datasheet (PDF)

 ..1. Size:196K  ixys
 ixgh50n60c4d1.pdf pdf_icon

IXGH50N60C4D1

VCES = 600VHigh-Gain IGBTs IXGQ50N60C4D1IC110 = 46Aw/ Diode IXGH50N60C4D1 VCE(sat) 2.3V High-Speed PT Trench IGBTsTO-3P (IXGQ)GCESymbol Test Conditions Maximum RatingsTabVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 90 AIC110 TC = 110

 3.1. Size:216K  ixys
 ixgh50n60c4.pdf pdf_icon

IXGH50N60C4D1

VCES = 600VHigh-Gain IGBTs IXGA50N60C4IC110 = 46AIXGP50N60C4 VCE(sat) 2.3V IXGH50N60C4High-Speed PT Trench IGBT TO-263 AA (IXGA)GEC (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC C (Tab)EIC25 TC = 25C

 4.1. Size:584K  ixys
 ixgh50n60c2.pdf pdf_icon

IXGH50N60C4D1

Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

 4.2. Size:586K  ixys
 ixgh50n60c2 ixgt50n60c2.pdf pdf_icon

IXGH50N60C4D1

Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

MOSTRAR MÁS

Otros transistores... IXGH48N60C3D1 , IXGH4N250C , IXGH50N120C3 , IXGH50N60B2 , IXGH50N60B4 , IXGH50N60B4D1 , IXGH50N60C2 , IXGH50N60C4 , IKW30N60H3 , IXGH50N90B2 , IXGH50N90B2D1 , IXGH56N60A3 , IXGH56N60B3 , IXGH56N60B3D1 , IXGH60N30C3 , IXGH60N60B2 , IXGH60N60C2 .

History: STGP10NB60S

 

 
Back to Top

 


 
.